MQ1N8177US Circuit Protection |
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| Allicdata Part #: | MQ1N8177US-ND |
| Manufacturer Part#: |
MQ1N8177US |
| Price: | $ 20.52 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | MQ1N8177US Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 18.65630 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
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TVS - Diodes are a specialized type of diode that can provide a high level of protection against overvoltage. The MQ1N8177US is a TVS (transient voltage suppression) diode that offers high-current protection against transients such as ESD (electrostatic discharge) and other similar events. This protective diode offers a low clamping voltage (7.5 to 10V @ 2A) and a breakdown voltage of 15V.
The MQ1N8177US is designed to protect sensitive electronic components and systems from potential overvoltage transients that could otherwise cause circuit damage or system malfunction. The diode is composed of two silicon diodes, one for each polarity, that are connected in series. The two diodes have different turn-on voltages and serve in the opposite polarity to raise the clamping voltage. This design allows for a higher surge absorption capability to protect circuits against ESD events.
The MQ1N8177US has numerous applications in the electronics and telecom industries. In particular, the device is widely used for protecting signal lines connecting to chips or integrated circuits. It is commonly used as an ESD and EMI (electromagnetic interference) protection device in telecom and consumer electronics. The high-current protection also makes it suitable for portable electronics and mobile phones.
The working principle of the MQ1N8177US is based on the avalanche effect of silicon diodes. This effect enables the device to conduct a large amount of current with only a small increase in voltage. When exposed to an overvoltage, the voltage across the diode increases until it reaches the avalanche breakover point. At this point, the diode turns on and conducts the excess current away from the protected circuit.
Once activated, the diode acts as a short circuit and limits the voltage across the protected circuit to its breakdown voltage. This voltage clamping action is able to dissipate the excess energy and effectively protect the sensitive components from damage. After the overvoltage situation is over, the diode automatically returns to its off state. The MQ1N8177US has also been designed with thermal design that provides tight temperature control to ensure its reliable operation.
In conclusion, the MQ1N8177US is a high-current, transient voltage suppression (TVS) diode that is designed to protect sensitive electronic components from overvoltage transients. It offers protection against ESD, EMI and other similar events that could otherwise damage the protected circuit. The device is suitable for use in telecom and consumer electronics applications, as well as in portable electronics and mobile phones, due to its high-current protection and low clamping voltage. Its working principle is based on the avalanche effect of silicon diodes, which enables it to dissipate and limit the excess energy from overvoltage situations.
The specific data is subject to PDF, and the above content is for reference
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| MQ1N8177US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
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| MQ1N8154 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
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| MQ1N8147 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8173 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8161 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8155 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8181 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8156US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8157US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8164US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8151 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8171 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8170US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8174 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8158US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8152 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8163 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8150US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8159US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8169US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8164 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8149US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8156 | Microsemi Co... | 20.38 $ | 1000 | TVS DIODE |
| MQ1N8168US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
| MQ1N8166US | Microsemi Co... | 20.52 $ | 1000 | TVS DIODE |
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MQ1N8177US Datasheet/PDF