MR0A08BCYS35R Allicdata Electronics
Allicdata Part #:

MR0A08BCYS35R-ND

Manufacturer Part#:

MR0A08BCYS35R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 1M PARALLEL 44TSOP2
More Detail: MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x ...
DataSheet: MR0A08BCYS35R datasheetMR0A08BCYS35R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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The MR0A08BCYS35R is a type of memory that can be used in a wide range of applications. This particular type of memory is an 8-bit SRAM device that is used frequently in embedded applications, such as those related to motor control, safety systems, communication systems and more. It is a low-power consumption design that is ideal for battery powered applications.

The device is organized as eight bit words and the address space of the device is up to 8K bytes. The MR0A08BCYS35R features an extremely fast data access time at 8ns and has excellent speed characteristics, making it well suited for faster embedded microprocessor applications.

The MR0A08BCYS35R is also RoHS complaint, making it compliant with stringent environmental regulations. Additionally, the device is also temperature grade compatible, making it an excellent solution for embedded systems that operate in extreme environments.

As far as applications for the MR0A08BCYS35R are concerned, it is commonly used in motor control applications, safety systems, communication systems, personal computers and other embedded applications. The device is also widely used in industrial automation, telecommunications and automobile applications.

The working principle of the MR0A08BCYS35R is based on static random access memory (SRAM). SRAM is a type of data storage technology that is widely used in modern electronic devices due to its speed and reliability. SRAM is based on a group of bi-stable flip-flops that store each bit. This structure allows for faster access times than dynamic RAM (DRAM).

In the MR0A08BCYS35R device, the flip-flops are organized into 8-bit words and the address space of the device is up to 8K bytes. The read and write operations are also performed with fast access times and the device is even capable of performing burst operations.

In terms of power consumption, the MR0A08BCYS35R device is designed to consume minimal power, making it an ideal choice for battery powered systems. This is achieved through the use of CMOS technology, which helps reduce the power consumption while retaining the same performance level. Additionally, the device is compliant with the RoHS standard and is capable of operating in extreme temperature ranges.

Overall, the MR0A08BCYS35R is an excellent choice for a wide range of applications due to its excellent speed, reliability and low power consumption. It is an ideal choice for embedded systems, motor control applications, safety systems, communication systems and more. Its 8-bit word size, 8K byte address space, fast access times and burst mode operation make it an extremely versatile memory device for a great many applications.

The specific data is subject to PDF, and the above content is for reference

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