MR0A08BYS35 Allicdata Electronics
Allicdata Part #:

819-1002-ND

Manufacturer Part#:

MR0A08BYS35

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 1M PARALLEL 44TSOP2
More Detail: MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x ...
DataSheet: MR0A08BYS35 datasheetMR0A08BYS35 Datasheet/PDF
Quantity: 527
Stock 527Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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Memory

MR0A08BYS35 is a memory integrated circuit (IC) manufactured by Renesas Electronics, a leader in the semiconductor industry. It is designed to provide high-density and high-performance memory with a wide range of applications. The MR0A08BYS35 offers great flexibility, with its on-chip EEPROM, Flash, SRAM, boot ROM and programmable logic. It helps streamline design and minimize storage demands.

The MR0A08BYS35 is a 256Mbit (32Mbyte) high-density dynamic random access memory (DRAM) that allows for high-density memory storage and fast data access capabilities. It features a 512-bit x 32-bit configuration, a rated operating temperature range between -55 and +125 °C, and a package size of 10 mm x 10 mm. It is also compliant to JEDEC (Joint Electron Device Engineering Council) standards and is pin-compatible with the SDRAM standard.

The MR0A08BYS35 is used in a wide range of application fields, such as industrial automation systems, medical imaging systems, automotive systems, data storage and other applications requiring high-density memory. Its on-chip EEPROM, Flash, SRAM, boot ROM and programmable logic allow for a variety of memory configurations and ultimate flexibility in high-density memory storage.

MR0A08BYS35 works based on a synchronous dynamic random-access memory architecture. It is composed of two main components: a data buffer and a control module. Data is stored in the data buffer, which is composed of four DRAM arrays. The control module is responsible for the control of read and write operations to and from the DRAM arrays. When data is requested, the control module signals the data buffers to release the requested data, while the write operations are managed by the control module and stored in the data buffer.

For applications requiring high memory demands and flexibility, MR0A08BYS35 is an ideal choice. It provides faster data access and higher density storage capabilities, along with on-chip EEPROM, Flash, SRAM, boot ROM and programmable logic. Compatibility to JEDEC and SDRAM standards and its wide range of operating temperature range make this IC a reliable and cost-effective solution for many applications.

MR0A08BYS35 offers a wide range of features for high-density memory storage and fast data access. Furthermore, its on-chip EEPROM, Flash, SRAM, boot ROM and programmable logic make it a great choice for many types of applications, making it a reliable and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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