MR0A08BSO35 Allicdata Electronics
Allicdata Part #:

819-1027-ND

Manufacturer Part#:

MR0A08BSO35

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 1M PARALLEL 32SOIC
More Detail: MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x ...
DataSheet: MR0A08BSO35 datasheetMR0A08BSO35 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MR0A08BSO35 is a highly efficient memory by Renesas Technology. This type of memory is designed for mission critical applications that require high levels of memory storage reliability. It has a small footprint and provides an optimal level of random access and sequential read speeds while achieving a high level of data integrity. The application fields of the MR0A08BSO35 cover a wide range of products and industries where reliability, long-term performance and flexibility are of fundamental importance.

The MR0A08BSO35 is ideal for mission critical applications in the industrial, commercial and telecommunication fields. It can be used in medical equipment, car manufacturing, automotive fleets, military and aerospace, etc. It can be provided as a stand-alone memory for embedded applications, as an embedded memory for mobile phones, or as a main memory for data centers.

The MR0A08BSO35 is designed to be highly reliable in normal and fault tolerant environments. It is designed to meet the highest standards in interface communication, data integrity and reliability. Its error correction capabilities also provide superior performance, data integrity and fault tolerance.

The working principle of the MR0A08BSO35 is quite simple. It is an asynchronous dynamic random access memory (DRAM) with a synchronous SRAM emulation mode. It uses two asynchronous DRAM arrays; one DRAM array stores the data and the other DRAM array stores the program. The SRAM emulation mode is used when data integrity is important. It features a latency clock, which provides the option of delayed or instantaneous access to data. The latency clock also provides low power consumption, since the memory only needs to be refreshed periodically.

The MR0A08BSO35 is a highly reliable and efficient memory option. Its design allows for optimized performance and flexibility while providing improved reliability and fault tolerance. Its features and capabilities make it ideal for mission critical applications in a wide range of industries. It is a reliable memory solution that can meet the needs of many different applications.

The specific data is subject to PDF, and the above content is for reference

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