MR2A08AMYS35 Allicdata Electronics
Allicdata Part #:

819-1026-ND

Manufacturer Part#:

MR2A08AMYS35

Price: $ 14.64
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 4M PARALLEL 44TSOP2
More Detail: MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x ...
DataSheet: MR2A08AMYS35 datasheetMR2A08AMYS35 Datasheet/PDF
Quantity: 1000
270 +: $ 13.30590
Stock 1000Can Ship Immediately
$ 14.64
Specifications
Series: Automotive, AEC-Q100
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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The MR2A08AMYS35 memory is one of the most commonly used memories in the market. It is capable of storing a large amount of data in a relatively small space, making it ideal for applications in which a large, complex memory system is needed but the space required is limited. MR2A08AMYS35 memory is extensively used in microprocessor-based electronic systems, including embedded systems, personal computers and digital signal processors.

The MR2A08AMYS35 memory is a dynamic random access memory (DRAM) device. It is a type of memory which allows for the fast and efficient storage and retrieval of data. The DRAM chip consists of a series of cells, each of which can store a single bit (1 or 0). To store or retrieve data, the chip\'s circuits work together to translate the data into the electrical signals needed for the cell.

The MR2A08AMYS35 memory can be configured to operate in a variety of modes. It can be used as a standard asynchronous DRAM, synchronous DRAM (SDRAM), double data rate (DDR) SDRAM, or low-power DDR SDRAM (LPDDR). Async Mode is designed for low power operation and offers the best features of both asynchronous and synchronous operation. Synchronous Mode extends the performance and capabilities of the device by running multiple access cycles in a single clock cycle. The DDR and LPDDR Modes are used for applications which require high speed data transfer and achieve higher speeds by transferring data twice per clock cycle.

One of the main advantages of the MR2A08AMYS35 memory is its high power efficiency. It features a low voltage operation (1.6V - 1.8V) and a low power standby mode, which enable it to be used in a wide range of applications. The device also features an auto-refresh counter which automatically refreshes the cells every row access. This helps reduce the power requirements, while still providing the required stability.

The MR2A08AMYS35 memory also features error detection and correction (EDC). EDC enables the device to detect and correct any errors that may arise due to bit flips or other sources of data corruption. This makes the device suitable for applications that require high reliability, such as aerospace. Finally, the device features an optional data-scrambling feature, which helps protect data from being corrupted by external sources or other system defects.

In summary, the MR2A08AMYS35 memory is an ideal choice for a variety of embedded and digital signal processing applications. Its low-power operation, high power efficiency, error detection/correction, and optional data scrambling makes it an excellent choice for systems that require reliable, high-speed memory.

The specific data is subject to PDF, and the above content is for reference

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