MR2A16AVYS35R Allicdata Electronics
Allicdata Part #:

MR2A16AVYS35REV-ND

Manufacturer Part#:

MR2A16AVYS35R

Price: $ 14.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 4M PARALLEL 44TSOP2
More Detail: MRAM (Magnetoresistive RAM) Memory IC 4Mb (256K x ...
DataSheet: MR2A16AVYS35R datasheetMR2A16AVYS35R Datasheet/PDF
Quantity: 1000
1500 +: $ 12.95390
Stock 1000Can Ship Immediately
$ 14.25
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MR2A16AVYS35R, one of the many types of memory that exists in the market today, is a type of dynamic random access memory (DRAM). It is often used in a variety of computing contexts such as embedded systems, computers, and mobile devices. The memory stores information as data and can be used for either read-only or for read/write access.

The MR2A16AVYS35R comes with a storage capacity of 16 megabytes, with an operational voltage of 3.3V and an access time of 35 nanoseconds. It is small in size, with dimensions of 8" by 8" (20 cm by 20 cm), making it an ideal solution for limited space applications.

The MR2A16AVYS35R is based on a DRAM-capable design and works by generating a tight grid of memory cells. These cells are arranged in a row and column pattern, with the cell located at the crossroads of a row and column address. When a specific cell is selected, the row and column addresses are decoded by an onboard logic circuit, which then presents the word line with the voltage needed to alter the data stored in the cell.

When the memory cell is addressed, data can be read via the data line associated with the cell. It is also possible for the contents of the cell to be written to—the memory cell can be pre-charged, and an appropriate voltage is applied to alter the data held in the cell. When the voltage is removed from the word line, the memory cell is ready for the next read or write operation.

In order to make better use of available memory, DRAM chips use a technique known as multiplexing. In this method, the cell addresses use two or more rows and columns to access a single bit of data. This allows for a smaller number of address pins to be used, making the memory chip smaller and more efficient.

The MR2A16AVYS35R is designed for use in embedded systems such as routers, switches and point-of-sale terminals. It is also used in desktop computers, laptop computers, mobile phones and other hand-held devices. It provides reliable, low-cost memory storage and is popular due to its cost-effectiveness and ease of use.

In conclusion, the MR2A16AVYS35R is a practical and versatile memory solution. Its efficient design and use of multiplexing technology make it a popular choice for many applications. The memory offers reliable storage in a small and cost-effective form factor, making it an ideal choice for embedded systems and computers.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MR2A" Included word is 24
Part Number Manufacturer Price Quantity Description
MR2A16AVYS35 Everspin Tec... 492.53 $ 4 IC RAM 4M PARALLEL 44TSOP...
MR2A08AYS35 Everspin Tec... 14.9 $ 98 IC RAM 4M PARALLEL 44TSOP...
MR2A16AMA35 Everspin Tec... -- 219 IC RAM 4M PARALLEL 48FBGA...
MR2A16AYS35 Everspin Tec... -- 1104 IC RAM 4M PARALLEL 44TSOP...
MR2A16ACYS35 Everspin Tec... -- 3481 IC RAM 4M PARALLEL 44TSOP...
MR2A16ACMA35 Everspin Tec... -- 2426 IC RAM 4M PARALLEL 48FBGA...
MR2A08ACMA35 Everspin Tec... 16.02 $ 1392 IC RAM 4M PARALLEL 48FBGA...
MR2A08ACYS35 Everspin Tec... -- 624 IC RAM 4M PARALLEL 44TSOP...
MR2A08AMA35 Everspin Tec... -- 1000 IC RAM 4M PARALLEL 48FBGA...
MR2A08AMA35R Everspin Tec... 11.44 $ 1000 IC RAM 4M PARALLEL 48FBGA...
MR2A16AMA35R Everspin Tec... 11.44 $ 1000 IC RAM 4M PARALLEL 48FBGA...
MR2A08AYS35R Everspin Tec... -- 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A16AYS35R Everspin Tec... 11.44 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A08ACMA35R Everspin Tec... 12.29 $ 1000 IC RAM 4M PARALLEL 48FBGA...
MR2A08ACYS35R Everspin Tec... 12.29 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A16ACMA35R Everspin Tec... 12.29 $ 1000 IC RAM 4M PARALLEL 48FBGA...
MR2A16ACYS35R Everspin Tec... -- 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A16AVMA35R Everspin Tec... 14.25 $ 1000 IC RAM 4M PARALLEL 48FBGA...
MR2A16AVYS35R Everspin Tec... 14.25 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A08AMYS35 Everspin Tec... 14.64 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A16AMYS35 Everspin Tec... 14.64 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A08AMYS35R Everspin Tec... 14.83 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A16AMYS35R Everspin Tec... 14.83 $ 1000 IC RAM 4M PARALLEL 44TSOP...
MR2A16AVMA35 Everspin Tec... 18.34 $ 253 IC RAM 4M PARALLEL 48FBGA...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics