MR2A08AYS35R Allicdata Electronics
Allicdata Part #:

MR2A08AYS35R-ND

Manufacturer Part#:

MR2A08AYS35R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 4M PARALLEL 44TSOP2
More Detail: MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x ...
DataSheet: MR2A08AYS35R datasheetMR2A08AYS35R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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Memory has been integrated in a wide range of computing fields, and MR2A08AYS35R is one of the most prominent memory products, used in various application fields due to its superior performance features. This article will discuss the application fields and working principles of MR2A08AYS35R.

Application Fields

MR2A08AYS35R provides high-speed read and write operations fitted for a variety of applications. It offers a high-density memory capacity for computing tasks such as scientific simulations, deep learning, battery-powered applications and more. Further, its data storage capabilities offer reliability, low power consumption and excellent performance. Additionally, its small form factor makes it ideal for mobile applications, such as wearable technology, mobile phones and consumer electronic devices.

Working Principle

MR2A08AYS35R has a self-refresh system, which continually refreshes the DRAM by re-writing data stored in the memory cell. This is done to ensure data stored in the DRAM cells is not lost due to power outages. As a result, the refresh rate of MR2A08AYS35R is much lower than conventional DRAMs, reducing power consumption by about 10 times. Furthermore, it has an integrated error correction code (ECC) functionality to detect and correct data errors due to interrupts from outside sources.

The double data rate (DDR) technology used in the design of MR2A08AYS35R supports high-speed data transmission which is twice as fast as the single data rate (SDR) technology. This is achieved by changing the DDR logic inputs from logic 0 to logic 1 during the second half of the clock cycle, thus optimizing the memory read and write speed.

The presence of multiple independent registers (MIRs) in the design of MR2A08AYS35R enables simultaneous use of multiple operations. This implies that the memory can be used to store and retrieve data on a transaction basis. Additionally, it has an integrated power control feature which can reduce the power consumption to standby levels when idle.

To conclude, MR2A08AYS35R is an excellent memory product with features optimized for a number of applications. Its applications range from scientific simulations to mobile phones, and its high-speed data transfers, error correction code and integrated power control capabilities make it an ideal choice for use in a wide array of applications.

The specific data is subject to PDF, and the above content is for reference

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