MR856G

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The MR856G is single rectifier diodes, specifically designed for the switching power supply and the battery charging field. It offers an robust, reliable and durable solution for a wide range of consumer, industrial and energy management applications.

The MR856G is a high-performance diode that has a tunnel junction transistor (TJT) structure, which provides excellent performance in terms of conduction and switching performance as well as high-temperature stability. It is capable of handling high switch-on currents and offers high surge capability, so it is suitable for applications where high voltage spikes are experienced. It is a rugged, reliable, and stable device that is suitable for a wide range of consumer and industrial applications.

The MR856G has a forward conduction voltage of 0.75V and can handle up to 8A of continuous current. Its maximum reverse voltage is 600V. The diode\'s reverse recovery time is low and is suitable for high frequency applications. Its high surge current capability makes it an excellent choice for applications that require high voltages and currents. The diode has a fast response time, so it can handle high-speed switching and is suitable for pulse width modulation (PWM) control. It has low power loss, so it is suitable for low power applications as well.

The MR856G features low forward voltage drop and low leakage current. It also has a high junction capacitance, making it suitable for high frequency applications. The diode also has a high surge current capability, which makes it suitable for applications where there is a lot of electrical noise. The diode is also rugged and reliable, and has a long life.

The MR856G is designed to be used in various applications, including power supplies, battery chargers, DC to DC converters, DC/DC converters and switch-mode power supplies. It is also suitable for use in robotics, LED lighting, inverters, digital TVs, and other electronic devices. The diode is designed for use in the switching power supply and battery charging fields, where it offers high reliability, increased responsiveness, and superior performance.

The MR856G works on the principle of tunneling, in which electrons are pulled towards the anode side of the diode due to the presence of an electric field. Electrons tunnel through the P-N junction of the diode and cross the junction, which allows current to flow. As electrons tunnel through the diode, they gain kinetic energy, which increases the speed of electricity. This process generates a voltage drop across the diode, which is what allows the diode to perform its rectifying function.

The MR856G is intended for use in a wide variety of applications, such as power supplies, battery chargers, DC-DC converters, digital TVs, and switch-mode power supplies. It is a rugged, reliable, and stable device that is suitable for high frequency applications as well as for low power applications. The diode offers high surge current capability, low power loss, and excellent performance. Its low leakage current and high junction capacitance allows it to be used in applications that demand high reliability and superior performance.

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