Allicdata Part #: | MR856RLGOSTR-ND |
Manufacturer Part#: |
MR856RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 3A DO201AD |
More Detail: | Diode Standard 600V 3A Through Hole DO-201AD |
DataSheet: | MR856RLG Datasheet/PDF |
Quantity: | 13200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 300ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | MR856 |
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The MR856RLG is a general-purpose epitaxial planar NPN transistor which is often used as a part of rectifier circuits and in power transistors. It is used in a wide variety of applications, from small electrical appliances to industrial equipment. Its main feature is its outstanding reliability and wide operating range.
The MR856RLG is particularly well-suited for use as a rectifier in critical circuits, such as those in computer systems and medical equipment where high performance and reliability are essential. Its ability to handle high current loads makes it an ideal choice for power rectification in high-power applications. It has a low reverse recovery time, low voltage drop, and low gate charge, making it very efficient in power rectification.
The MR856RLG operates in a three-terminal configuration. It has an emitter, a collector, and a base, which are connected together. The collector and emitter are used to control the flow of current and the base is used to control the output voltage. By varying the current flow through the base and the collector, the voltage across the load can be adjusted, allowing for precise control of the output voltage. The MR856RLG can also be configured to act as a switch, allowing it to be used in a variety of circuit configurations.
The MR856RLG also has a wide operating temperature range, which makes it suitable for use in a variety of environments. This makes it a very versatile choice for a wide range of applications. Additionally, the device has very low power dissipation and low noise characteristics, helping to keep the operation of the device quiet and efficient.
The typical operating parameters of the MR856RLG are as follows: it has a forward current ranging from 50 to 1,000 mA, a maximum average voltage drop of 1.0V, and a maximum reverse recovery time of 20ns. The device has an inverse voltage rating of 40V and a maximum junction temperature of 150°C. It is also capable of withstanding a pulsed load of up to 600V.
The MR856RLG is an excellent choice for a wide range of applications. Its outstanding reliability and wide operating range make it an excellent choice for use in power rectification, as well as in controlling the output voltage of other circuits. Its low noise and power dissipation properties make it suitable for use in a variety of environments. With its low forward voltage and reverse recovery times, it is also an excellent choice for use as a rectifier in power delivery circuits. Its versatility, reliability and wide range of uses make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MR856RLG | ON Semicondu... | -- | 13200 | DIODE GEN PURP 600V 3A DO... |
MR852RLG | ON Semicondu... | -- | 4800 | DIODE GEN PURP 200V 3A DO... |
MR851G | ON Semicondu... | 0.28 $ | 5058 | DIODE GEN PURP 100V 3A AX... |
MR854G | ON Semicondu... | 0.28 $ | 3791 | DIODE GEN PURP 400V 3A DO... |
MR852G | ON Semicondu... | 0.28 $ | 4321 | DIODE GEN PURP 200V 3A DO... |
MR851RLG | ON Semicondu... | 0.07 $ | 6000 | DIODE GEN PURP 100V 3A AX... |
MR854RLG | ON Semicondu... | 0.07 $ | 3600 | DIODE GEN PURP 400V 3A DO... |
MR856G | ON Semicondu... | 0.28 $ | 270 | DIODE GEN PURP 600V 3A DO... |
MR854RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
MR856RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
MR854 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 3A DO... |
MR852RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
MR850 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
MR851 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
MR851RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
MR852 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
MR856 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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