MSA1162GT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 6V
Power - Max:	200mW
Frequency - Transition:	80MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59
Base Part Number:	MSA1162

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The MSA1162GT1G is a high-performance and high-output, surface mount transistor. It is a single, bipolar (BJT) transistor designed for general purpose applications. This transistor is based on the NPN structure (i.e. N-type semiconductor is in the emitter) and is used for various general purpose applications, including amplifier and switching operations.

The purpose of this article is to provide an overview of the MSA1162GT1G and discuss its application field and working principle. Additionally, the article will discuss the features of the MSA1162GT1G and provide an overview of the common applications.

The MSA1162GT1G was designed for use in general purpose applications, including amplifier and switching operations. It is a high-performance and high-output surface mount transistor, with a low on-resistance between the collector-emitter junction. This transistor is also designed with low collector to emitter capacitance and low power dissipation, making it ideal for use in a wide range of applications.

The working principle of the MSA1162GT1G is based on the NPN structure. N-type semiconductors are located in the emitter, while P-type semiconductors are located in the collector. This structure allows electrons to flow from the emitter, through the base and into the collector, which amplifies the signal. This structure also allows the transistor to act as a switch, which is used to direct current in a circuit.

In addition to its excellent performance, the MSA1162GT1G offers a number of features that make it a great choice for a variety of applications. It is designed for use in a wide voltage range, from 0-150V, making it suitable for use with a range of different input voltages. This device also features an excellent power dissipation range of up to 7 Watts, and a maximum collector current of up to 5 Amperes. This makes the MSA1162GT1G a great option for a wide range of applications.

The MSA1162GT1G can be used for a variety of applications, including amplifier and switching operations. This device is commonly used as switching elements in power supplies and in switching applications in automotive or industrial electronics. It is also used in circuits with high current demands, such as amplifier stages. Additionally, the MSA1162GT1G can be used in radio frequency (RF) amplifiers and oscillators, as well as in audio amplifiers.

In conclusion, the MSA1162GT1G is an excellent, high-performance and high-output surface-mount transistor. It is a single, bipolar (BJT) transistor designed for general purpose applications, such as amplifiers and switching operations. The MSA1162GT1G is designed for use in a wide voltage range, features an excellent power dissipation range and a maximum collector current of up to 5 Amperes. Furthermore, the device can be used in a variety of applications, including amplifier and switching operations.

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