![MSA1162YT1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MSA1162YT1-ND |
Manufacturer Part#: |
MSA1162YT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.1A SC-59 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 200mW... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Base Part Number: | MSA1162 |
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The MSA1162YT1 is a single bipolar junction transistor (BJT) designed primarily for use in switching applications. With its low input current, low noise, and low saturation voltage, it is well-suited for use in switching circuits, especially in high frequency applications.
This BJT device is made up of two PN junction terminals that meet in the middle and share a common P-type layer. The three terminals (or "gates") are the Emitter, Base and Collector and are contact points for passing current through the transistor. The base is the gate of control and is where the smallest charge must be applied to turn the device on or off.
The working principle of this BJT is based on the fact that the P-type layer of the two PN junction terminals is controlled by the voltage applied to the base. When the base is given a certain voltage, a current is allowed to flow between the emitter and the collector. This current is proportional to the base voltage and is known as the "mcU ratio". The use of a BJT offers control over power through varying the input, allowing for the device to be used as a switch or amplifier.
One of the main applications of the MSA1162YT1 is in broadband radio frequency (RF) circuits. The device has a low input current and low noise, making it ideal for RF applications. It can also be used in low power DC-DC switching applications, where it is used to convert a low-voltage direct current (DC) power source into a higher voltage DC. other applications include timing circuits, motor control, and voltage regulators.
The MSA1162YT1 is also well-suited for use in power amplifiers and medium power low noise amplifier (LNA). It has low noise, low input current, and low saturation voltage, and can be used to amplify signals in a broad frequency range. In power amplifiers and LNA circuits, the device shows excellent power gains and stability, which makes it ideal for use in short-range radio and transmitter systems.
In summary, the MSA1162YT1 is a single bipolar junction transistor (BJT) designed primarily for use in switching applications. Its low input current and noise, as well as low saturation voltage, make it an ideal choice for a range of signal amplifier circuits, especially in high frequency applications. Its most common applications include RF amplifiers and LNA circuits, DC-DC voltage converters, motor control, and timing circuits.
The specific data is subject to PDF, and the above content is for reference
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