MSB92AS1WT1G Allicdata Electronics
Allicdata Part #:

MSB92AS1WT1G-ND

Manufacturer Part#:

MSB92AS1WT1G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 300V 0.5A SC-70-3
More Detail: Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 150m...
DataSheet: MSB92AS1WT1G datasheetMSB92AS1WT1G Datasheet/PDF
Quantity: 1000
9000 +: $ 0.02547
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 10V
Power - Max: 150mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MSB92W
Description

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British Radio Innovation Inc. (BRII) has recently announced the launch of their new MSB92AS1WT1G Transistor. This transistor offers superior performance over other transistors, which makes it an ideal choice for a variety of applications. To help you understand more about the MSB92AS1WT1G, we\'ll take a look at some of its key features, its application field and working principle.

Transistors - Bipolar (BJT) - Single

The MSB92AS1WT1G belongs to the family of Bipolar Junction Transistors (BJT), which can be used both in amplification and switching applications. It is a single-stage PNP transistor with a maximum collector-emitter voltage of 40V and a continuous collector current of 1A. It features a low saturation voltage of 0.43V @ 100mA and an excellent hFE of up to 500, making it an ideal choice for a variety of applications.

Application Field and Working Principle

The MSB92AS1WT1G is an excellent choice for a variety of applications, including linear and switching amplifiers, audio amplifiers, and other power amplifier applications. It can be used in both linear and switching applications, due to its low saturation voltage and excellent hFE. It is also suitable for use in power converters, such as Buck (current) and Boost (voltage).

The working principle of the MSB92AS1WT1G is as follows: The base of the transistor is kept at a certain potential, which allows for the control of the current flowing between the collector and the emitter. When the base is kept at a certain potential, the current flow between the collector and the emitter is governed by the voltage and current gain parameters, which define the efficiency of the device. This means that the transistor can regulate the flow of current, creating a voltage drop that is used to power other components.

The MSB92AS1WT1G has a wide range of uses and is an ideal choice for a variety of applications. It has a low saturation voltage, a wide voltage and current gain, and is suitable for both linear and switching applications. It is an excellent choice for power converters, audio amplifiers, and other switching amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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