
Allicdata Part #: | MSB92T1-ND |
Manufacturer Part#: |
MSB92T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.15A SC-59 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 150mA 50MHz 150m... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 30mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
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Transistors are an important part of modern electronics. They are widely used as amplifiers, oscillators, switches, and current regulators. They come in many different varieties, but one of the most widely used types is the Bipolar Junction Transistor (BJT). Bipolar junction transistors are transistors with a single base and two junctions, one between the collector and base, and the other between the base and the emitter.
The MSB92T1 is a single bipolar junction transistor (BJT). It is a dual-collector, PMOS transistor with a maximum frequency of 150 MHz. It has a built-in base and collector diode for protection against voltage surge and is hermetically sealed in a silicon nitride passivated package. The MSB92T1 is widely used in high-precision, frequency-agile applications such as computer peripherals, precision automotive and communication systems, and medical equipment.
The primary application of the MSB92T1 is as a high frequency switch. It is designed to switch quickly and accurately between two output states (referred to as "switch-on" and "switch-off") in response to a control signal. The switching speed of the MSB92T1 can be adjusted through the use of an external bias resistor or by varying the input voltage level. The MSB92T1 can be used as a single-pole/double-throw (SPDT) switch or as a dual-pole/double-throw (DPDT) switch. It is also suitable for use in negative resistance circuits.
The working principle of the MSB92T1 is based on the concept of current gain. This is the ability of the transistor to increase the current flowing through its collector when a small voltage is applied to its base. The current gain of a bipolar junction transistor is determined by the ratio of the collector current (Ic) to the base current (Ib). The MSB92T1 is designed to have a very high current gain of 200-300 at frequencies up to 150 MHz. This allows it to switch quickly and precisely between two output states.
The MSB92T1 is a versatile, high-performance transistor that is well-suited for use in a variety of high-frequency switch applications. Its hermetically sealed package and built-in protection against voltage surge make it an ideal choice for precision, high-frequency switching devices. Its wide current gain range, up to 300 at frequencies up to 150 MHz, make it an ideal choice for fast and precise control of output states.
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