MSC2295-BT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	150MHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 1mA, 10V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59

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MSC2295-BT1G Application Field and Working Principle

The MSC2295-BT1G RF Transistor is a high power transistor used in the RF field. It is a low-speed, low-noise, non-resonant device, designed specifically for high-power applications such as distributed systems and point-to-point links. It provides high output power and efficiency, while offering a wide range of low- and high-power operating levels.The MSC2295-BT1G is a compact and cost-effective device. It utilizes an integrated MOSFET structure to obtain a high output power, while operating at a low frequency band. It is also equipped with a thermally stable design for long-term reliability and excellent dynamic range.The MSC2295-BT1G is a bipolar junction transistor (BJT) designed specifically for RF applications. It consists of a base, a collector and an emitter. The base is connection between the collector and the emitter, and acts as a control element. It allows the current flow to be controlled by the voltage applied to the base.When a voltage is applied to the base, current flows through the collector and emitter. This current flow, in turn, causes a large number of electrons to be attracted to the base-collector junction, resulting in an avalanche effect, which produces a large current. This current is then used to amplify the signal being applied to the amplifier circuit.The transistor is also capable of functioning as a switch. In this mode, it works as a switch by turning the current on and off. This is achieved by a voltage applied to the gate of the transistor, which is connected to the base. When this voltage is applied, the current flows through the transistor, and the switch is turned on. When the voltage is removed, the current is cut off and the switch is turned off.The MSC2295-BT1G is an excellent choice for applications such as broadcast, base station and personal communications, as well as low-power, distributed systems. Additionally, it is also capable of working with a wide operating temperature range, making it ideal for temperature-sensitive applications.In conclusion, the versatile MSC2295-BT1G RF Transistor is an ideal choice for RF applications requiring high output power and efficiency, while offering a wide range of low- and high-power operating levels. Its integrated MOSFET structure ensures high performance and reliable operation while its thermally stable design ensures long-term reliability. Moreover, its low-noise operation makes it an ideal choice for applications in which noise levels are critical, such as broadcast and base station communications.

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