MSC2295-CT1 Allicdata Electronics
Allicdata Part #:

MSC2295-CT1-ND

Manufacturer Part#:

MSC2295-CT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN RF BIPO 20V SC-59
More Detail: RF Transistor NPN 20V 30mA 150MHz 200mW Surface Mo...
DataSheet: MSC2295-CT1 datasheetMSC2295-CT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Description

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MSC2295-CT1 is a RF transistor designed for use in a number of applications where high power and performance is needed. It is a bipolar junction transistor (BJT) designed for use in frequencies ranging from 1 to 500 MHz. The MSC2295-CT1 is designed to drive large loads, provide increased efficiency, and better power consumption. In this article, we discuss the applications and working principles of the MSC2295-CT1.

The MSC2295-CT1 is commonly used in applications requiring high power, such as in RF power amplifiers, low noise amplifiers, color television and satellite receivers, and general purpose amplifiers. The MSC2295-CT1 is also well-suited to applications requiring excellent thermal stability, such as RF power amplifiers and low noise amplifiers. Additionally, the device is suitable for high temperature operation due to its superior temperature stability.

The MSC2295-CT1 is designed to provide high power, high gain, and a high frequency response. Its large area base-collector junction and low capacitance lateral transistor characteristics make it ideal for high power applications. Additionally, the high current density of the MSC2295-CT1 ensures improved output power without the need for a high bias voltage, providing improved efficiency and power consumption.

In terms of design, the MSC2295-CT1 contains two bipolar transistors, one as the input transistor and the other as the output transistor. The voltage gain of the MSC2295 is largely determined by the input transistor, and the current gain is determined by the output transistor. The output transistor is designed with a high current capacity, allowing the device to drive large loads with minimal distortion. Additionally, the MSC2295-CT1 is designed to allow for the adjustment of its switching frequency, allowing for flexible operation depending on the application.

The MSC2295 is designed to work over a wide range of operating conditions such as a wide range of temperatures, supply voltages, and gain. It also has excellent noise characteristics, allowing it to be used in low noise applications. Additionally, the device is designed to be resistant to RF interference and other sources of wideband noise.

In terms of operation, the MSC2295-CT1 is normally used in an emitter follower configuration. In this configuration, the emitter of the MSC2295-CT1 is connected to a reference voltage, while the base is connected to the signal source. The collector is then connected to the load. The operation of the MSC2295-CT1 is based on the emitter follower principle, where the emitter follows the base voltage, with a small voltage drop between them. This voltage drop is known as the common-base input offset voltage.

The MSC2295-CT1 is designed to be used in a wide range of applications, due to its high power, performance, and efficiency. Its broad frequency response, high current capacity, and low noise characteristics make it an ideal choice for a variety of applications. Additionally, its ability to operate over a wide range of temperatures and supply voltages make it a highly effective device for use in areas such as radio frequency amplifiers, low noise amplifiers, and general purpose amplifiers.

The specific data is subject to PDF, and the above content is for reference

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