Allicdata Part #: | MSC2295-CT1G-ND |
Manufacturer Part#: |
MSC2295-CT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN RF BIPO 20V SC-59 |
More Detail: | RF Transistor NPN 20V 30mA 150MHz 200mW Surface Mo... |
DataSheet: | MSC2295-CT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 150MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 1mA, 10V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
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Transistors - Bipolar (BJT) - RF
The MSC2295-CT1G is a General Purpose Transistor specifically designed to meet the needs of linear small signal and large signal applications. It is a type of bipolar junction transistor (BJT) made from silicon and is used to amplify signals. It is a current-controlled three-terminal device with a Base, Collector and Emitter.
Application field of MSC2295-CT1G
The MSC2295-CT1G is designed for applications such as audio amplification, signal switching and signal sensing. It is mainly used in low-frequency RF applications (<100 MHz). It can be used as an oscillator, mixer, modulator and amplifier, among other applications. The device can also be used in switching power supplies and battery chargers.
Working principle of MSC2295-CT1G
The working principle of the MSC2295-CT1G is based on the transistor effect. This effect is the basic principle of operation of the device where the current in the base-emitter junction is controlled by the current in the collector-emitter junction. The basic operation of the MSC2295-CT1G is similar to that of a normal transistor; a small current is applied to the Base (input signal) which is then amplified by the dynamic current gain of the transistor. This amplified signal is then applied to the Collector (output signal).
Advantages of the MSC2295-CT1G
The main advantages of the MSC2295-CT1G are its low power consumption, its ability to operate over a wide temperature range, and its high current gain. Its low-noise operation makes it ideal for audio applications, and its high power output is useful for switching applications. The device also has a wide range of voltage ratings, which makes it suitable for high-voltage applications.
Conclusion
The MSC2295-CT1G is a type of bipolar junction transistor (BJT) made from silicon and is used to amplify signals. It is mainly used in low-frequency RF applications (<100 MHz). The device is designed for applications such as audio amplification, signal switching and signal sensing. It has a wide range of voltage ratings, a high current gain and a low noise operation, making it suitable for high-voltage applications and audio applications.
The specific data is subject to PDF, and the above content is for reference
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