MSD42SWT1 Allicdata Electronics
Allicdata Part #:

MSD42SWT1OS-ND

Manufacturer Part#:

MSD42SWT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.15A SOT323
More Detail: Bipolar (BJT) Transistor NPN 300V 150mA 150mW Sur...
DataSheet: MSD42SWT1 datasheetMSD42SWT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Power - Max: 150mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MSD42
Description

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Transistors are solid-state semiconductor devices most commonly used for switching and amplifying electrical signals. Bipolar junction transistors (BJTs) are the most common type of transistor, comprised of two p-n junction diodes placed back-to-back and functioning as an amplifying switch. Single transistors are used for a variety of applications, including digital logic functions, audio amplification and radio frequency amplification.

The MSD42SWT1 is a single bipolar junction transistor manufactured by Infineon Technologies. It is a dual-gate MOSFET with a compact dual flat no-lead (DFN) package. The device provides significant design flexibility with dual-gate driving control and low on-state resistance. It is suitable for a variety of applications, from analog and digital logic circuitry to high speed switching and automotive functions.

The MSD42SWT1 has an on-state resistance of 1.2 ohm Max and can handle drain-source voltages up to 27 V. It is rated for 5 A maximum pulse current and has an operating temperature range of -40°C to +125°C. The device is RoHS compliant and available in multiple package sizes.

The working principle of the MSD42SWT1 is based on the MOSFET transistor model wherein the current flow between the source and the drain is controlled by the electrical signal applied to the gate. This device consists of two separate transistor channels, one referred to as the “high side” and the other referred to as the “low side”. The channels are controlled by the voltage applied to their respective gates, with the high side being on when the voltage is less than the source voltage and the low side being on when the gate voltage is greater than the source voltage.

The main application field for the MSD42SWT1 is automotive and possible applications include power steering, airbags, steering assist, and throttle control. It is also suitable for use in off-board systems and can be used as a voltage regulator, motor control, and switching functions. In addition, it is well-suited for power electronics, audio amplifiers, and driving lamps and is often used in battery-powered products such as computers, smartphones, and other portable devices.

The MSD42SWT1 is a useful device for a wide variety of applications. It is well-suited for power management and switching functions in automotive, off-board, and audio applications. It features a low on-state resistance and is available in multiple package sizes. The device is RoHS compliant and has an operating temperature range of -40°C to +125°C.

The specific data is subject to PDF, and the above content is for reference

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