
Allicdata Part #: | MSD42SWT1OS-ND |
Manufacturer Part#: |
MSD42SWT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.15A SOT323 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 150mA 150mW Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MSD42 |
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Transistors are solid-state semiconductor devices most commonly used for switching and amplifying electrical signals. Bipolar junction transistors (BJTs) are the most common type of transistor, comprised of two p-n junction diodes placed back-to-back and functioning as an amplifying switch. Single transistors are used for a variety of applications, including digital logic functions, audio amplification and radio frequency amplification.
The MSD42SWT1 is a single bipolar junction transistor manufactured by Infineon Technologies. It is a dual-gate MOSFET with a compact dual flat no-lead (DFN) package. The device provides significant design flexibility with dual-gate driving control and low on-state resistance. It is suitable for a variety of applications, from analog and digital logic circuitry to high speed switching and automotive functions.
The MSD42SWT1 has an on-state resistance of 1.2 ohm Max and can handle drain-source voltages up to 27 V. It is rated for 5 A maximum pulse current and has an operating temperature range of -40°C to +125°C. The device is RoHS compliant and available in multiple package sizes.
The working principle of the MSD42SWT1 is based on the MOSFET transistor model wherein the current flow between the source and the drain is controlled by the electrical signal applied to the gate. This device consists of two separate transistor channels, one referred to as the “high side” and the other referred to as the “low side”. The channels are controlled by the voltage applied to their respective gates, with the high side being on when the voltage is less than the source voltage and the low side being on when the gate voltage is greater than the source voltage.
The main application field for the MSD42SWT1 is automotive and possible applications include power steering, airbags, steering assist, and throttle control. It is also suitable for use in off-board systems and can be used as a voltage regulator, motor control, and switching functions. In addition, it is well-suited for power electronics, audio amplifiers, and driving lamps and is often used in battery-powered products such as computers, smartphones, and other portable devices.
The MSD42SWT1 is a useful device for a wide variety of applications. It is well-suited for power management and switching functions in automotive, off-board, and audio applications. It features a low on-state resistance and is available in multiple package sizes. The device is RoHS compliant and has an operating temperature range of -40°C to +125°C.
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