MSD42WT1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 30mA, 10V
Power - Max:	150mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70-3 (SOT323)
Base Part Number:	MSD42

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MSD42WT1 transistors are an important component in many electronic structures, and these devices are widely used in a variety of applications. Transistors are used to amplify electrical signals, control the flow of current, and act as switches. The MSD42WT1 transistor is a type of Bipolar Junction Transistor (BJT), which consists of two Darlington pairs formed by the connection of two transistors in the same package. This type of transistor is also known as a double-sided triac.The MSD42WT1 transistor is designed for high-reliability commercial and industrial applications. It is characterized by excellent performance, small size, and high-frequency operation from 50 Hz to 300 kHz. It is also highly resistant to electrical noise and has very low distortion abilities. The MSD42WT1 transistor is manufactured using a high-quality silicon wafer and is available in several packages including PDIP, SOIC, SOP, and TO-220. MSD42WT1 transistors have an active region with a minimum breakdown voltage of 20 volts and a maximum operating temperature of 150°C. The working principle behind the MSD42WT1 is simple. It is a three-terminal device with the base, emitter, and collector. The current flow through the device is controlled by the base-emitter voltage and is proportional to the base current. The current gain, or “hFE”, is typically between 40-200 depending on the manufacturing process.The MSD42WT1 can be used in a variety of applications including audio amplifiers, high-frequency oscillators, low-noise amplifiers, driving power transistors, oscillators, switching circuits and so on. It is suitable for both high-frequency and low-frequency applications due to its low noise characteristics, wide common-mode range, and high voltage withstand capability. MSD42WT1 is commonly used in audio amplifiers, power supply circuits, battery-powered instruments, switching circuits, and measurement equipment such as printers, photocopiers, etc.As the MSD42WT1 is a three-terminal device, the characteristics of the device can be varied by altering the bias conditions. The collector current can be controlled by the base current, and this allows the device to be used as a current amplifier in applications such as audio amplifiers. The base current can also be controlled by the collector-emitter voltage, and this allows the device to be used as a switch. In switching circuits, the current gain can be varied widely by adjusting the base current, allowing it to be used in applications such as motor control, digital signal processing, etc.The MSD42WT1 is a versatile component that can be used in a variety of applications, from low-frequency to high-frequency applications. It offers excellent performance with low distortion, small size, and high-frequency operation. It is suitable for many commercial and industrial applications and is available in several packages.

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