MSD601-ST1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	290 @ 2mA, 10V
Power - Max:	200mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59
Base Part Number:	MSD601

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Introduction to MSD601-ST1G
MSD601-ST1G is a single bipolar junction transistor (BJT) with a recommended operating temperature range of -65 to 150°C. This transistor features high current gain, low saturation voltage and low thermal resistance. It is ideal for low power switching applications where fast switching speeds and low power dissipation are required. Applications of MSD601-ST1G
MSD601-ST1G transistors have several applications in low-power switching circuits, including:

• Switch mode power supplies (SMPS)
• Power control circuits
• Precision rectifiers
• Timer circuits
• Logic circuits

It is also used in low-noise amplifiers, motor control circuits, switching amplifiers and many other low-power applications. Working Principle of MSD601-ST1G
The MSD601-ST1G is a general purpose bipolar junction transistor (BJT) that consists of two P-type and one N-type semiconductor layers. It has three terminals, the collector (C), emitter (E) and base (B). When a voltage is applied to the base, it creates a current flow between the collector and emitter terminals. This is known as “forward-bias”. The resulting current is amplified by the transistor, enabling the device to serve as a low-power switch or amplifier. The amount of current amplification depends on the transistor’s current gain, typically expressed as hFE. As the voltage between the collector and emitter increases, the current gain also increases, up to a maximum value.When the base is disconnected from the circuit, the transistor is in a “reverse-bias” state, wherein the collector current is blocked. This makes it ideal for switching applications that require a high-frequency switching speed and low power dissipation. Conclusion
The MSD601-ST1G is a single bipolar junction transistor (BJT) with a wide temperature range of -65 to 150°C. It is suitable for low power switching applications and offers high current gain, low saturation voltage and low thermal resistance. Its three terminals, collector, emitter and base, allow for forward- or reverse-bias states, enabling the transistor to be used as a switch or amplifier. This makes the MSD601-ST1G a great option for low-power, low-noise and fast-switching applications.

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