Allicdata Part #: | MSD602-RT1GOSTR-ND |
Manufacturer Part#: |
MSD602-RT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.5A SC59 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surf... |
DataSheet: | MSD602-RT1G Datasheet/PDF |
Quantity: | 42000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 150mA, 10V |
Power - Max: | 200mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
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The MSD602-RT1G is a type of transistor belonging to the single bipolar junction transistor (BJT) category. It is intended for broadband applications and is designed for easy chain discretization. This makes it an important component in wireless communication platforms of all kinds.
The MSD602-RT1G transistor is equipped with an integrated EVB layer, which allows increased performance and improved stability when used in a variety of high frequency applications. It also features a high gain stage with low current drain, making it ideal for applications that require power efficiency. This transistor is optimized for use in base transceiver stations, mobile phones, and other high frequency systems.
The MSD602-RT1G transistor is composed of two monolithic N- and P-channel bipolar transistors integrated into a single package. This package also includes the required driver circuitry, allowing for simpler and easier implementation of the device. The transistor is also heavily doped with phosphorus, resulting in high breakdown voltage, low threshold, and low tolerance of bias current variation.
The working principle of the MSD602-RT1G is based on the same principle as other BJTs, whereby a voltage applied to the base creates a small electrical current that, in turn, controls the larger current passing through the emitter-collector circuit. This exemplary transistor has an exceptionally high gain, meaning that relatively small voltage across the base-emitter junction will be able to control a much higher current in the emitter-collector circuit.
Due to the high gain and its small size, it makes the MSD602-RT1G ideal for applications that require high gain and low power consumption, as well as for applications with a need for good low-frequency response. It is also widely used in audio amplifiers reaching audio frequencies up to 20kHz, RF amplifiers and VHF receivers, and power supplies. It is also suitable for switching applications, such as video circuits and data processing, and has become a staple component in the telecommunications industry.
Furthermore, the MSD602-RT1G is used in industrial, automotive, and consumer electronics applications. It can be used for high-frequency inverters, converters, motor control, and any system requiring a good low-frequency response. It also prominently features in LED drivers, lighting control, remote control transmitter circuits, and battery chargers.
Given the wide variety of features, applications, and features of the MSD602-RT1G single bipolar junction transistor, it is easy to see why it has become such an important component in various systems and applications in the industry. Its high gain and excellent low-frequency response make it a key component for high frequency communication, audio amplification, or any other application requiring a dependable transistor.
The specific data is subject to PDF, and the above content is for reference
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