| Allicdata Part #: | 1086-8346-ND |
| Manufacturer Part#: |
MSMCG58CAE3 |
| Price: | $ 1.27 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 58V 93.6V DO215AB |
| More Detail: | N/A |
| DataSheet: | MSMCG58CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 527 +: | $ 1.15211 |
| Voltage - Clamping (Max) @ Ipp: | 93.6V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 16A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 64.4V |
| Voltage - Reverse Standoff (Typ): | 58V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes are an efficient way to prevent Voltages above a predetermined level in a device. In particular, the MSMCG58CAE3 is a specialized TVS Diode used to protect devices from transient voltage conditions. The MSMCG58CAE3 is one of the few TVS Diodes capable of discharging significantly more power than the other common Diodes in its category. Utilizing its excellent ability to stand-off transient voltages and the specially designed ultra low capacitance SRV structure, the MSMCG58CAE3 is the perfect choice for protecting sensitive electronics.
The MSMCG58CAE3 is a surface mount transient voltage suppressor (TVS) designed to prodect sensitive circuits from voltage arising from electrostatic discharge (ESD), electrical fast transients (EFT), and surge protection. Its ESD protection levels can go up to 28KV/withstand 20Amps surge current for 8/20us. The MSMCG58CAE3 has maximum peak pulse power of 720W (10x1000us). This protection device is utilized in high speed data lines, and interfaces which are subject to high voltage transients due to ESD protection or severe lightning surge conditions. The peak clamping voltage is 58V with an Ipp of 20A.
The working principle of the MSMCG58CAE3 is implemented in the form of an avalanche breakdown. The avalanche breakdown occurs in the n+ layer of the diode immediately when the voltage applied to the device exceeds its breakover voltage of Vpp. This causes a high current to be discharged from the device. The exact mechanism for the avalanche breakdown is described below. When a voltage is applied across the n+ layer, the electrons that are accelerated to the positive voltage side break down the bonds in the semiconductor lattice. This causes ‘holes’ to be created in the lattice, which creates more electrons, and the current passing through the device increases exponentially.
This rapid increase in current causes the voltage across the device to drop, and the device clamps the voltage at its breakdown level. The device limits the current passing through the device, which ensures that the protected circuit is not damaged due to high current. This clamped voltage is the peak clamping voltage of the device, which is its maximum potential blocking voltage. The breakdown is almost instantaneous, and the current then begins to decrease exponentially. This behaviour is very similar to the function of a diode. As the current decreases, the voltage also decreases until the device reaches its zener voltage.
The MSMCG58CAE3 is designed for applications in a wide range of products including TV’s, monitors, computers, home theatre systems, automotive and communications equipment. The device utilizes specific construction techniques that allow it to operate at ultra low capacitance, which in turn allows for the best possible transients response in its category. This device is also extremely durable, and is capable of withstanding high temperature, as well as other harsh environmental conditions. The device also has a wide operating temperature range, so it is suitable for both indoors and outdoor applications.
In summary, the MSMCG58CAE3 is a specialized TVS diode used to protect devices from transient voltage conditions. Utilizing its excellent stand-off transient voltage ratings and ultra low capacitance SRV structure, the MSMCG58CAE3 is the perfect choice for protecting sensitive electronics. This device is specifically designed for applications that require high performance and low capacitance. The MSMCG58CAE3 device also provides an impressive amount of surge protection, and can withstand temperatures of up to 200°C while still maintaining solid protection for its circuitry.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMCJ6.5AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MSMCJ20A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJLCE58A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMCJ100A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MSMCJ8.0CA/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCG26AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
| MSMCJ18CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
| MSMCJLCE11A/TR | Microsemi Co... | 3.2 $ | 1000 | TVS |
| MSMCG15CA | Microsemi Co... | 2.24 $ | 40 | TVS DIODE 15V 24.4V DO215... |
| MSMCJ30CA | Microsemi Co... | 2.13 $ | 167 | TVS DIODE 30V 48.4V DO214... |
| MSMCJ17A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ60A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ45CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMCGLCE100A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 100V 162V DO215... |
| MSMCG28A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMCJ11CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMCJLCE51AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCJLCE90AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 90V 146V DO214A... |
| MSMCGLCE70AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MSMCGLCE16AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG60CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MSMCJLCE18A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJLCE70AE3/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJ20A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
| MSMCJ40CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 40V 64.5V DO214... |
| MSMCJ7.5CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCG16CAE3 | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG90CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMCGLCE11AE3 | Microsemi Co... | 3.7 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMCGLCE48A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 48V 77.4V DO215... |
| MSMCJ54AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
| MSMCG7.5AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCJ60CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMCJ64CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MSMCG170CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MSMCJLCE51A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCGLCE130A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMCG150A | Microsemi Co... | 2.13 $ | 170 | TVS DIODE 150V 243V DO215... |
| MSMCJ36A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ8.5A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMCG58CAE3 Datasheet/PDF