MSMCGLCE100AE3

Voltage - Clamping (Max) @ Ipp:	162V
Supplier Device Package:	SMCG (DO-215AB)
Package / Case:	DO-215AB, SMC Gull Wing
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	90pF @ 1MHz
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	1500W (1.5kW)
Current - Peak Pulse (10/1000µs):	9.3A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	111V
Voltage - Reverse Standoff (Typ):	100V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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The MSMCGLCE100AE3 TVS diode is a transistor voltage-suppressor device optimized for suppression of low to medium voltage transients across the supply lines. This diode is a low capacitance device designed to be fully compliant with the latest industry standards for Electro-static Discharge (ESD). The TVS diode’s architecture enhances its Electro-Static Discharge (ESD) protection capabilities by controlling both common and differential mode voltages, making it suitable for use in a wide variety of industrial and automotive applications.The TVS diode is a three terminal device with two terminals (anode and cathode) and a gate terminal. It is a standard PN junction diode with a reverse bias voltage applied between the anode and the cathode. The gate terminal is connected to the anode to control the breakdown voltage. When a positive transient voltage is applied to the anode, the gate terminal exhibits a positive potential which increases the breakdown voltage of the diode. A positive transient voltage applied to the cathode gate will result in an opposite effect, reducing the breakdown voltage of the diode. The level of breakdown voltage is principally controlled by the gate-to-anode voltage which can be adjusted by the user.On the other hand, the MSMCGLCE100AE3 also has a low capacitance property when compared to other TVS diodes, making it more suitable for high-speed signal applications. The low junction capacitance of this device helps eliminate any potential load or slew-rate problems associated with high-speed signal performance. This makes the TVS diode ideal for ESD protection in lieu of traditional surge suppression technologies. The low capacitance also reduces the losses due to noise coupling on the power or ground lines as well as in the signal-carrying media.The MSMCGLCE100AE3 can also provide reverse breakdown protection, which is an important consideration for a large range of industrial applications. Reverse breakdown is the voltage level which causes a diode to start conducting in a reverse biased state. For the MSMCGLCE100AE3, reverse breakdown occurs at a rating of 40V. This allows the diode to serve as a safety measure by preventing any potential over-voltage damage to the main semiconductor device.Overall, the MSMCGLCE100AE3 is an ideal choice for ESD, signal integrity, and transient protection due to its tried and tested architecture and low capacitance property. The device is cost-effective, easily accessible, and is suitable for both ac and dc applications for a wide range of industrial and automotive applications. The device offers an ESD protection rating of ±30KV for contact ESD, and is specified over the temperature range of -55℃ to 150℃.

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