MSMCGLCE28AE3 Allicdata Electronics
Allicdata Part #:

1086-8444-ND

Manufacturer Part#:

MSMCGLCE28AE3

Price: $ 3.74
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 28V 45.5V DO215AB
More Detail: N/A
DataSheet: MSMCGLCE28AE3 datasheetMSMCGLCE28AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
210 +: $ 3.39534
Stock 1000Can Ship Immediately
$ 3.74
Specifications
Voltage - Clamping (Max) @ Ipp: 45.5V
Supplier Device Package: SMCG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 33A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 31.1V
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMCGLCE28AE3 belongs to the family of transient voltage suppression diodes (popularly known as TVS). These diodes are bidirectional, having two anodes and two cathodes and are mainly used in applications where a transient or high voltage spike is seen. The device body is a ceramic package with two leads, an anode and a cathode. It has a capacitance range of 2.78pF to 14.2pF, an operating junction temperature range of -55To 150 Degree Celsius and a maximum surge temperature of +150 Degree Celsius.

Application field

MSMCGLCE28AE3 can be used for numerous industrial applications for providing protection against high voltage spikes. These include automotive electronics, power lines, electronic switchgear, telecom sectors, military and space aerospace applications. It can also be used in wireless networks for providing protection against a wide spectrum of transient voltages. This diode is suitable for being used in areas that require exceeding the EMI/RFI standards.

Working principle

The working principle of TVS - Diodes is based on the avalanche breakdown. Under the effect of high electric fields, some electrons in the reverse - biased PN-junction are accelerated to high energies, until they might create ions in the silicon lattice and create a visible light. At this stage, a large number of electrons and holes recombine, and a sudden number of charge carriers is recorded, generating a surge in the current flow. This current flow is however short-lived and called a Transient Voltage Suppression (TVS) diode surge. The TVS - diode then quickly returns to its original reverse-biased voltage state without any permanent harm or catastrophic failure.

The specific data is subject to PDF, and the above content is for reference

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