| Allicdata Part #: | 1086-8467-ND |
| Manufacturer Part#: |
MSMCGLCE60A |
| Price: | $ 3.74 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 60V 96.8V DO215AB |
| More Detail: | N/A |
| DataSheet: | MSMCGLCE60A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 210 +: | $ 3.39534 |
| Voltage - Clamping (Max) @ Ipp: | 96.8V |
| Supplier Device Package: | SMCG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 90pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 15.5A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 66.7V |
| Voltage - Reverse Standoff (Typ): | 60V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MSMCGLCE60A is a common TVS diode found in consumer electronic and industrial equipment applications. This device is a bidirectional, transient voltage suppressor that is designed to protect circuit devices from over-voltage damage caused by transient voltage events. It is capable of withstanding voltage transients up to 60 volts and has been designed specifically to protect circuit devices from voltage transients caused by lightning, power surges, and EMI/RFI noise.
The MSMCGLCE60A is constructed with a housing that has brass contact pins, which provide physical electrical connections for the power line connections. The contact pins allow the diode to be easily mounted onto a circuit board for simple installation. The MSGCGLCE60A is rated for operation from -55°C to +105°C. It is also available in 16-lead PDIP packages for installation in standard circuit boards and smaller SOIC packages for use in printed circuit boards.
The working principle of the MSMCGLCE60A is based on avalanche breakdown of the PN junction. When the voltage across the PN junction exceeds the diode’s avalanche breakdown voltage, the minority carrier concentrations at the junction increase exponentially. This increase in minority carrier concentration causes the effective resistance of the PN junction to decrease dramatically, allowing a transient voltage pulse to be diverted through the diode and away from the protected device. The supply voltage is then clamped within the breakdown voltage of the diode.
The MSMCGLCE60A is available in various configurations including uni-directional and bidirectional devices, depending on the application. The bi-directional features of the MSMCGLCE60A provide surge protection on both the positive and negative sides of the power line, which helps to protect circuit devices such as processors, memory, and other logic circuits from potential voltage-related damage. The bidirectional feature also increases the effectiveness of the diode in protecting the circuit from both positive and negative transient voltage events.
The MSMCGLCE60A has several advantages over other transient voltage suppressors in terms of its high reverse break-over voltage. This feature is especially pertinent for applications where the voltage levels may exceed the breakdown voltage of other protection devices. It also provides excellent surge current and surge voltage protection, making it suitable for protecting circuit devices in industrial and automotive electrical equipment. Additionally, the MSMCGLCE60A is designed for demanding operating conditions and easily meets the requirements of IEC 61000-4-2, providing reliable surge protection.
In summary, the MSMCGLCE60A transient voltage suppressor is an ideal solution for protecting circuit devices from over-voltage damage caused by transient voltage events. It is capable of withstanding voltage transients up to 60 volts and is available in 16-lead PDIP and smaller SOIC packages. The bidirectional design of the MSGCGLCE60A provides surge protection on both the positive and negative sides of the power line, making it ideal for protecting circuit devices such as processors, memory, and other logic circuits from potential voltage-related damage. Furthermore, it is designed for demanding operating conditions and easily meets the requirements of IEC 61000-4-2, providing reliable surge protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMCJ6.5AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MSMCJ20A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJLCE58A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMCJ100A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MSMCJ8.0CA/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCG26AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
| MSMCJ18CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
| MSMCJLCE11A/TR | Microsemi Co... | 3.2 $ | 1000 | TVS |
| MSMCG15CA | Microsemi Co... | 2.24 $ | 40 | TVS DIODE 15V 24.4V DO215... |
| MSMCJ30CA | Microsemi Co... | 2.13 $ | 167 | TVS DIODE 30V 48.4V DO214... |
| MSMCJ17A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ60A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ45CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMCGLCE100A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 100V 162V DO215... |
| MSMCG28A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMCJ11CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMCJLCE51AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCJLCE90AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 90V 146V DO214A... |
| MSMCGLCE70AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MSMCGLCE16AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG60CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MSMCJLCE18A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJLCE70AE3/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJ20A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
| MSMCJ40CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 40V 64.5V DO214... |
| MSMCJ7.5CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCG16CAE3 | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG90CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMCGLCE11AE3 | Microsemi Co... | 3.7 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMCGLCE48A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 48V 77.4V DO215... |
| MSMCJ54AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
| MSMCG7.5AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCJ60CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMCJ64CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MSMCG170CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MSMCJLCE51A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCGLCE130A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMCG150A | Microsemi Co... | 2.13 $ | 170 | TVS DIODE 150V 243V DO215... |
| MSMCJ36A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ8.5A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
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TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMCGLCE60A Datasheet/PDF