MSMCJ120AE3 Allicdata Electronics
Allicdata Part #:

1086-8506-ND

Manufacturer Part#:

MSMCJ120AE3

Price: $ 1.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 120V 193V DO214AB
More Detail: N/A
DataSheet: MSMCJ120AE3 datasheetMSMCJ120AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
596 +: $ 1.01871
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Voltage - Clamping (Max) @ Ipp: 193V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 7.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 133V
Voltage - Reverse Standoff (Typ): 120V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Transient Voltage Suppression (TVS) diodes protect a wide range of electronics, such as computers, communications devices, digital circuits, and automotive systems, from potentially damaging electrical transients from power surges and other rapid changes in voltage. The MSMCJ120AE3 is a Discrete TVS diode in a Strictly Compliant (SC) SOD−123 package offering a highly integrated solution for applications that require improved ESD/ESDF/CD protection. It offers excellent surge protection, immediate response to surges, and ESD protection for both RF and data. This article will discuss the application fields and working principle of MSMCJ120AE3.

The MSMCJ120AE3 is designed for use in battery protection, secondary protection, and secondary EOS (External Overvoltage Shut-off) systems, and in applications requiring low operating voltage and low capacitance. Its small size and low capacitance make it ideal for use in mobile electronic devices, such as smartphones, tablets, and portable game consoles, which have stringent size and design constraints. The device is also suitable for use in other portable electronics, such as media players, radios, and digital cameras.

The MSMCJ120AE3 offers high surge protection and low operating voltage. It has a breakdown voltage of 12 V, and a maximum clamping voltage of 16.3 V. The device also features very low capacitance of just 4.9 pF ESD−HBM1 and more than 19 kV ESD−CDM1 . The device is rated for IEC−61000−4−2 (level 4, 8 kV), IEC−61000−4−4 (level 2, 4 kV), and IEC−61000−4−5 (level 3, 2.1 A) voltage/current upsurge protection. Additionally, the device has an ESD diode built-in to protect against human contact. All of these features make the MSMCJ120AE3 an ideal solution for surge and ESD protection.

In terms of working principle, the MSMCJ120AE3 is a zener diode with a low forward voltage drop. When an electrical transient occurs, such as a power surge or other sudden increase of voltage, the diode will quickly absorb the inrush current. The device works by limiting the current surge and preventing the circuit design from overheating. The zener diode also provides ESD protection by immediately clamping transient voltages and offering an extra layer of protection for the equipment.

The MSMCJ120AE3 is a highly integrated and reliable solution for both surge and ESD protection. It is designed to be used in applications where inrush current and low operating voltage are necessary. Its small size and low capacitance make it ideal for use in portable electronic devices. The device offers excellent surge protection, immediate response to surges, and ESD protection for both RF and data. In conclusion, the MSMCJ120AE3 is a great choice for surge and ESD protection, and is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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