MSMCJ130CAE3/TR Allicdata Electronics
Allicdata Part #:

MSMCJ130CAE3/TRMS-ND

Manufacturer Part#:

MSMCJ130CAE3/TR

Price: $ 1.20
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMCJ130CAE3/TR datasheetMSMCJ130CAE3/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
500 +: $ 1.09809
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Current - Peak Pulse (10/1000µs): 7.2A
Supplier Device Package: SMCJ (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 209V
Voltage - Breakdown (Min): 144V
Voltage - Reverse Standoff (Typ): 130V
Bidirectional Channels: 1
Moisture Sensitivity Level (MSL): --
Type: Zener
RoHS Status: RoHS Compliant
Part Status: Active
Description

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TVS diodes have a range of functions to provide protection against Electrostatic Discharge (ESD), Electrical Fast Transient (EFT) and many other power-induced transient surges. The latest innovation in this field is the MSMCJ130CAE3/TR from ON Semiconductor. This device is designed to offer superior protection against general purpose transient surges in the 1.5-1000V range.

The MSMCJ130CAE3/TR is a Bi-Directional Transient Voltage Suppressor (TVS Diode) that combines the characteristics of conventional surge protection devices with the benefits of diodes. It is designed for primary protection against EFT and ESD pulses, and protects against Voltage Developments (VDs) associated with both positive and negative transients. As the leading name in the TVS diode market, ON Semiconductor takes pride in their high-quality devices that provide reliable protection against power and transient surges.

The MSMCJ130CAE3/TR is a robust unidirectional device specifically designed for single line TVS diode protection applications. It operates over a wide range of voltages, from 1.5V to 1000V, and helps minimize ESD-induced gate damage and minimize latch-up in both high-voltage N-Channel and P-Channel Field Effect Transistors (FETs). Its small package helps to save space in area-restricted applications, while its integrated protection package helps to protect against unwanted transient surges.

The MSMCJ130CAE3/TR works using a three-step process. First, it functions as an ESD protection clamp that blocks or diverts any transient voltage exceeding the device’s standoff voltage or maximum clamp voltage. Next, it charges up its capacitance in order to absorb and store the energy. Finally, it dissipates the stored energy through the diode’s internal resistance.

In short, the MSMCJ130CAE3/TR is an ideal option for designers looking for robust protection against ESD, EFT and transient surge pulses. It is a suitable solution for high-speed digital and mixed-signal applications within the broad 1.5 - 1000V operating range. Its integration of advanced protection features provides assurance that the device will protect not only against ESD pulses, but also against Vibrations, Induced Voltages (IVs), ESD-Induced Gate Damage (GID), and Latch-up.

The MSMCJ130CAE3/TR is a unique, unidirectional device designed for applications requiring a single line of protection. Its integrated design helps to simplify ESD and EFT protection schemes, while its small package size helps to save space in area-restricted applications. This device offers dependable protection against not only ESD, EFT, and transient surge pulses, but also against a wide range of power-induced transients.

The specific data is subject to PDF, and the above content is for reference

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