| Allicdata Part #: | 1086-8605-ND |
| Manufacturer Part#: |
MSMCJ51A |
| Price: | $ 1.12 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 51V 82.4V DO214AB |
| More Detail: | N/A |
| DataSheet: | MSMCJ51A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 596 +: | $ 1.01871 |
| Voltage - Clamping (Max) @ Ipp: | 82.4V |
| Supplier Device Package: | DO-214AB (SMCJ) |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 18.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 56.7V |
| Voltage - Reverse Standoff (Typ): | 51V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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A Transient Voltage Suppression (TVS) diode is a solid state device designed to protect electrical circuits against voltage transients, which are brief, unexpected increases in voltage. The MSMCJ51A is a 600 Watt unidirectional Transient Voltage Suppression (TVS) diode for transient over-voltage protection. It is designed for fast response to transient and surge requests from lightning or other sources such as telecommunications, network equipment, industrial and consumer electronic systems.
A TVS diode is a semiconductor junction device designed to protect sensitive electronic circuits from excessive transient voltages, or overvoltages, caused by electrostatic discharge, switching, lightning, or faults on power lines. The MSMCJ51A is an ideal TVS device for protecting electronic systems from voltage transients. The MSMCJ51A has a low dynamic resistance and is available in a package that is compatible with soldering or thermally conductive epoxy for reliable, efficient protection. The MSMCJ51A is capable of handling a sustained pulse with a peak power of 600 Watts and a peak current of 51 Amps. The device features a fast response time to transients, a low leakage current under normal operating conditions, and a wide operating temperature range.
The MSMCJ51A is typically used in consumer electronic devices such as televisions, computers, and other electronic products. It is used to provide protection against transient and surge voltages that are generated by lightning strikes or other sources. It can be used in a variety of applications, including telecommunications, medical, consumer electronics, industrial, automotive, data processing, and defense. Additionally, the device is used in ESD sensitive applications such as hard drives, displays, and electro-mechanical systems.
The working principle of the MSMCJ51A is based on the breakdown voltage capability of the silicon junction, which is dependent on the type of silicon used in the diode. When under the effects of an over-voltage transient, the junction of the diode breaks down and limits the excessive voltage. This feature allows the MSMCJ51A to be used for transient protection in a wide variety of applications. When the over-voltage transient is greater than the breakdown voltage of the device, the device will absorb the excess energy and dissipate it in the form of heat.
The MSMCJ51A is a device designed for fast response to the transient and surge requests from lightning or other sources such as telecommunications, network equipment, industrial and consumer electronic systems. It is designed to protect sensitive electronic circuits from excessive transient voltages, or overvoltages, caused by electrostatic discharge, switching, lightning, or faults on power lines. The MSMCJ51A is capable of handling a sustained pulse with a peak power of 600 Watts and a peak current of 51 Amps. Its features include a low dynamic resistance, fast response time, low leakage current, and a wide operating temperature range. It is suitable for applications such as telecommunications, medical, consumer electronics, industrial, automotive, data processing, and defense.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMCJ6.5AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MSMCJ20A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJLCE58A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMCJ100A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MSMCJ8.0CA/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCG26AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
| MSMCJ18CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
| MSMCJLCE11A/TR | Microsemi Co... | 3.2 $ | 1000 | TVS |
| MSMCG15CA | Microsemi Co... | 2.24 $ | 40 | TVS DIODE 15V 24.4V DO215... |
| MSMCJ30CA | Microsemi Co... | 2.13 $ | 167 | TVS DIODE 30V 48.4V DO214... |
| MSMCJ17A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ60A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ45CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMCGLCE100A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 100V 162V DO215... |
| MSMCG28A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMCJ11CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMCJLCE51AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCJLCE90AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 90V 146V DO214A... |
| MSMCGLCE70AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MSMCGLCE16AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG60CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MSMCJLCE18A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJLCE70AE3/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJ20A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
| MSMCJ40CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 40V 64.5V DO214... |
| MSMCJ7.5CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCG16CAE3 | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG90CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMCGLCE11AE3 | Microsemi Co... | 3.7 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMCGLCE48A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 48V 77.4V DO215... |
| MSMCJ54AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
| MSMCG7.5AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCJ60CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMCJ64CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MSMCG170CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MSMCJLCE51A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCGLCE130A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMCG150A | Microsemi Co... | 2.13 $ | 170 | TVS DIODE 150V 243V DO215... |
| MSMCJ36A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ8.5A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMCJ51A Datasheet/PDF