MSMCJ70AE3 Allicdata Electronics
Allicdata Part #:

1086-8642-ND

Manufacturer Part#:

MSMCJ70AE3

Price: $ 1.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70V 113V DO214AB
More Detail: N/A
DataSheet: MSMCJ70AE3 datasheetMSMCJ70AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
596 +: $ 1.01871
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 13.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage suppressor) diodes are semiconductors designed to protect sensitive electronics from voltage ticks and surges that are higher than what the electronics are rated for. TVS diodes are increasingly being used in modern day electronics as the need to secure sensitive hardware becomes more and more important. If used correctly, they can protect against damage during voltage transients, which is when a sudden spike in electrical energy occurs in a circuit. The MSMCJ70AE3 is one such TVS diode, developed by Microsemi, and it can be used to protect not only all types of microprocessors but also digital circuits such as drives, amplifiers, memory, and logic circuits. Let us take a look at the working of the MSMCJ70AE3 and what its application fields are.

The MSMCJ70AE3 is a bi-directional TVS diode made from silicon avalanche technology. This makes it a robust device that can withstand large transient voltages and protect the hardware that it is connected to. It provides Electrostatic Discharge (ESD) protection in both directions. It provides protection up to a maximum of 70V in bipolar mode, which is beneficial when dealing with all types of transients and ESD events. The MSMCJ70AE3 also has a very low forward voltage drop of about 0.8V, which is beneficial when trying to reduce power losses in the circuit.

The main application fields of the MSMCJ70AE3 are microprocessors, complementary metal-oxide-semiconductor (CMOS) logic circuits, discrete memory, digital drives, and amplifiers. The MSMCJ70AE3 can be used to protect against Electrostatic Discharge (ESD), as well as over-voltage transients. Its low capacitance levels and low reverse leakage current ensure that its performance remains unaffected even when connected to sensitive circuitry. It can also provide protection from surges of up to 20A. Such robust performance makes it ideal for protecting all types of digital electronics from voltage spikes.

The working principle of the MSMCJ70AE3 is based on the avalanche effect. When the voltage in the circuit rises above the diode’s breakdown voltage, a thin depletion region is created and the current starts to flow in a controlled manner. This reduces the transient voltage and protects the connected hardware. The working principle is further enhanced when the diode is connected in series with other components, such as transistors and capacitors, because the components work together to further reduce voltage surges.

In conclusion, the MSMCJ70AE3 is a reliable and robust TVS diode that can be used in demanding applications. It provides 70V of protection in bipolar mode, and has a low forward voltage drop of 0.8V. It can also protect against Electrostatic Discharge (ESD) and over-voltage transients. Its main application fields are microprocessors, discrete memory, digital drives, and amplifiers, and its working principle is based on the avalanche effect. The MSMCJ70AE3 is thus an ideal device for protecting digital electronics from voltage spikes and other transient conditions.

The specific data is subject to PDF, and the above content is for reference

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