MSMCJ75AE3 Allicdata Electronics
Allicdata Part #:

1086-8646-ND

Manufacturer Part#:

MSMCJ75AE3

Price: $ 1.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 75V 121V DO214AB
More Detail: N/A
DataSheet: MSMCJ75AE3 datasheetMSMCJ75AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
596 +: $ 1.01871
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Voltage - Clamping (Max) @ Ipp: 121V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 12.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 83.3V
Voltage - Reverse Standoff (Typ): 75V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMCJ75AE3 is a unidirectional, 3-line TVS diode (TVS stands for Transient Voltage Suppressor) designed to protect sensitive electronic equipment from voltage transients induced by lightning and other noise sources. This diode is used to protect lines from the effects of over-voltage, under-voltage, load dump, voltage transients caused by switching inductive loads, and electrostatic discharge; making it ideal for automotive applications.

The MSMCJ75AE3 device is available in three different packages: a surface-mount SOD93, an SOT23, and an SMA. It offers maximum peak pulse power over 1500W and a peak pulse current of 75A. The device has a very low internal capacitance of only 1.0pF, making it suitable for protection of high-speed data lines. Its low clamping voltage ensures maximum peak pulse current is reached within a very short time.

The working principle of the MSMCJ75AE3 diode is based on the device\'s Avalanche breakdown voltage. When the diode is subjected to a voltage surge exceeding the diode\'s working voltage, a conducting path is established by the Avalanche effect. This exponentially increases the current and thus clamps the voltage in the circuit. The Avalanche breakdown voltage of the MSMCJ75AE3 diode is 6.5V. It also has a typical reverse stand-off voltage of 5V and a maximum continuous reverse current of 5mA.

The MSMCJ75AE3 is an 8.6mm² SOD-93 package diode. It has a low on-state resistance (Rds) typically of less than 48mΩ and its case temperature can reach up to 125°C with a maximum operating junction temperature of 150°C.

The main application field of the MSMCJ75AE3 diode is for automotive data bus protection and is used in many automotive systems. It is used to protect high-speed data lines such as CAN-bus and LIN-bus from over-voltage and under-voltage transients. The device can also be used for protecting other automotive circuits from load dump, voltage transients, and ESD (electrostatic discharge) events.

The MSMCJ75AE3 diode is a small and reliable device that is chosen over other protection devices when a compact size and low internal capacitance are important. It is cost-effective, efficient, and a great choice for automotive applications, making it one of the most popular choice of TVS diodes available today.

The specific data is subject to PDF, and the above content is for reference

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