MSMCJ75CA/TR Allicdata Electronics

MSMCJ75CA/TR Circuit Protection

Allicdata Part #:

MSMCJ75CA/TRMS-ND

Manufacturer Part#:

MSMCJ75CA/TR

Price: $ 1.20
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMCJ75CA/TR datasheetMSMCJ75CA/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
500 +: $ 1.09809
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Current - Peak Pulse (10/1000µs): 12.4A
Supplier Device Package: SMCJ (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Voltage - Reverse Standoff (Typ): 75V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Description

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TVS diodes, also known as transient voltage suppressors, are electronic components designed to protect large electrical systems from voltage spikes and surges. The MSMCJ75CA/TR is a three-terminal device with a surge current rating of 600A and a maximum-voltage rating of 75V. It is widely used in a range of applications, including automotive, telecom, computer, consumer, and aircraft systems.

The MSMCJ75CA/TR uses two separate integrated circuit structures. The first is a surge protection diode, which is a single, two-terminal device located near the anode in the circuit. This diode is designed to redirect any high-voltage surge or spike away from the anode, decreasing the flux of electrons and preventing damage to the system. The second integrated circuit is a MOSFET NPN transistor, which is used to support the reset of the diode after a surge event. This transistor has a breakdown voltage ratings of 80V and a maximum-voltage rating of 75V. The N-channel MOSFET is also used to modify the reverse-recovery characteristics of the MSMCJ75CA/TR, reducing its switching time and improving its efficiency.

The MSMCJ75CA/TR has several primary components and design features that contribute to its functional performance. These include a surge-protection diode, an N-channel MOSFET NPN transistor, an internal protection circuit, an external capacitor, and an emitter resistor. Together these components create a low-pass filter that functions as an analog filter, limiting the amount of energy that can pass through the system and reducing the risk of damage from high-energy surges or spikes in external voltage.

The surge-protection diode is the main component for protecting the system from high-energy voltage surges and spikes. When a surge or spike occurs, the diode redirects the energy away from the system. The MOSFET NPN transistor is another important component, as it provides the reset of the diode and modifies the reverse-recovery characteristics of the device.

The internal protection circuit serves as an extra layer of protection by preventing any reverse-flow of current from occurring. It also avoids any overvoltage that may result from large current surges. The external capacitor provides additional filtering for the system, reducing any high-frequency noise introduced in the system. The emitter resistor is designed to limit the amount of current that can go through the circuit in the event of a surge or spike.

The MSMCJ75CA/TR is currently listed as a UL recognized component and is designed to meet VDE 0860 and IEC 60768-2 safety requirements. With its low-pass filter design, the MSMCJ75CA/TR is capable of protecting electrical systems from voltage surges and spikes up to 75V and is especially suited for applications in automotive, telecom, computer, consumer, and aircraft systems.

The specific data is subject to PDF, and the above content is for reference

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