MSMCJLCE100AE3 Allicdata Electronics
Allicdata Part #:

1086-8674-ND

Manufacturer Part#:

MSMCJLCE100AE3

Price: $ 3.60
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 100V 162V DO214AB
More Detail: N/A
DataSheet: MSMCJLCE100AE3 datasheetMSMCJLCE100AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
218 +: $ 3.26750
Stock 1000Can Ship Immediately
$ 3.6
Specifications
Voltage - Clamping (Max) @ Ipp: 162V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 9.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 111V
Voltage - Reverse Standoff (Typ): 100V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MSMCJLCE100AE3 is a TVS-Diode device that is used to protect against excessive current and voltage. It helps protect electronic systems from power surges, spikes, and over-voltage transients. It can be used in a variety of applications, including telecom and power electronics, automotive applications, industrial equipment, and consumer electronics.

The MSMCJLCE100AE3 has a low profile 3mm x 3mm surface mount package size that makes it an ideal choice for space-constrained applications. Its high breakdown voltage and low dynamic resistance makes it a perfect solution for high-performance system protection. Additionally, it is also RoHS compliant, making it a safe choice for many applications.

Understanding the working principle of the MSMCJLCE100AE3 is key in order to understand its use in various applications. The MSMCJLCE100AE3 is a silicon avalanche diode with a multi-layered structure. The layers are made of special material combinations and arranged in a certain order to provide an avalanche operation region. When an excessive amount of current is applied to the device, the voltage across it will increase above its rated operating voltage. This causes the PN junction to break down, allowing the excess current to be quickly discharged. As the current is discharged, the avalanche diode will continuously breakdown, allowing a current path for the current to flow. This avalanche breakdown eliminates the protection of the device and prevents damage to the application.

The MSMCJLCE100AE3 is used in a variety of applications such as telecom, power electronics, automotive, and consumer electronics. In telecom systems, the device is used to protect from ESD and voltage transients. In power electronics, the device is used to protect against overvoltage transients. In automotive applications, the device is used to protect circuits against electrical transients due to the impact of road conditions. And in consumer electronics, the device is used to protect against overvoltage transients present in an everyday environment.

In summary, the MSMCJLCE100AE3 is a low profile 3mm x 3mm surface mount package size TVS-Diode that is used to protect against excessive current and voltage. Its multi-layered structure and high breakdown voltage make it a perfect solution for applications in the telecom, power electronics, automotive, and consumer electronics fields. Understanding the working principle of the MSMCJLCE100AE3 is essential in order to effectively use it in these applications.

The specific data is subject to PDF, and the above content is for reference

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