| Allicdata Part #: | 1086-8746-ND |
| Manufacturer Part#: |
MSMCJLCE70AE3 |
| Price: | $ 3.60 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 70V 113V DO214AB |
| More Detail: | N/A |
| DataSheet: | MSMCJLCE70AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 218 +: | $ 3.26750 |
| Voltage - Clamping (Max) @ Ipp: | 113V |
| Supplier Device Package: | DO-214AB (SMCJ) |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 90pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 13.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 77.8V |
| Voltage - Reverse Standoff (Typ): | 70V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS (Transient Voltage Suppression) diodes are electrostatic or electrical breakdown devices designed for the protection of electrical or electronic circuits against transient overvoltage (voltage spikes) caused by lightning, industrial test equipment and instrumentation, and in a variety of automobiles, airplanes and spacecraft. The MSMCJLCE70AE3 is a bi-directional, high-two terminal device ideal for industrial and automotive systems that require high surge capability with very low leakage. The device is designed to protect against electrostatic discharge (ESD) and other high transient voltage overshoots, and is rated for 70 amperes peak surge current.
The MSMCJLCE70AE3 has a stand-off voltage of 7 volts and a clamping voltage of 10.5V, ensuring that the voltage does not exceed these limits. The device also features a low clamping voltage, low effective capacitance, high surge current capability, and good reverse blocking capability. It is available in SOT-223 and SOT-323 packages.
The working principle of the MSMCJLCE70AE3 is based on the principle of Zener breakdown wherein a depletion region is created between N and P semiconductor layers when the device is exposed to a high voltage. When this voltage is exceeded, an avalanche breakdown occurs, which causes the depletion region to undergo a high rate of electron-hole recombination leading to the production of an avalanche current. This current is then dissipated, and the excess energy is removed from the device, thereby protecting the device from damage or destruction.
The MSMCJLCE70AE3 is designed to provide protection in many industrial, automotive and other power systems. It is particularly useful in applications such as automotive powertrains, power distribution units, automotive electronic control racks, and automotive body electronics. The device is also suitable for some aerospace applications, such as high transient voltage applications in alternators, fuel and hydraulic systems, and engine control systems.
In automotive powertrains, the device is used to protect critical electrical and electronic components from transient voltage overshoot due to EMI and inductive kick back currents from electric or hybrid motor drive systems. It also helps protect electric powertrain components such as battery, alternator, electric motor and onboard charger from overvoltage events. In power distribution units, the MSMCJLCE70AE3 is used to protect all the downstream components from damages due to line induced transients. The device is also used in automotive body electronics applications such as body control modules, door modules, audio systems and instrument clusters.
In conclusion, the MSMCJLCE70AE3 is an ideal choice for protection against electrostatic discharge (ESD) and other high transient voltage overshoots in a wide range of industrial, automotive and aerospace applications. Its low clamping voltage, low effective capacitance, high surge current capability and good reverse blocking capability make it an ideal device for use in transient voltage protection applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMCJ6.5AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MSMCJ20A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJLCE58A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMCJ100A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MSMCJ8.0CA/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCG26AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
| MSMCJ18CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
| MSMCJLCE11A/TR | Microsemi Co... | 3.2 $ | 1000 | TVS |
| MSMCG15CA | Microsemi Co... | 2.24 $ | 40 | TVS DIODE 15V 24.4V DO215... |
| MSMCJ30CA | Microsemi Co... | 2.13 $ | 167 | TVS DIODE 30V 48.4V DO214... |
| MSMCJ17A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ60A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ45CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMCGLCE100A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 100V 162V DO215... |
| MSMCG28A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMCJ11CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMCJLCE51AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCJLCE90AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 90V 146V DO214A... |
| MSMCGLCE70AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MSMCGLCE16AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG60CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MSMCJLCE18A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJLCE70AE3/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
| MSMCJ20A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
| MSMCJ40CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 40V 64.5V DO214... |
| MSMCJ7.5CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCG16CAE3 | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MSMCG90CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMCGLCE11AE3 | Microsemi Co... | 3.7 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMCGLCE48A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 48V 77.4V DO215... |
| MSMCJ54AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
| MSMCG7.5AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMCJ60CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMCJ64CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MSMCG170CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MSMCJLCE51A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MSMCGLCE130A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMCG150A | Microsemi Co... | 2.13 $ | 170 | TVS DIODE 150V 243V DO215... |
| MSMCJ36A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
| MSMCJ8.5A/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMCJLCE70AE3 Datasheet/PDF