Allicdata Part #: | MSRT15060(A)D-ND |
Manufacturer Part#: |
MSRT15060(A)D |
Price: | $ 28.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP 600V 150A 3 TOWER |
More Detail: | Diode Array 1 Pair Series Connection Standard 600V... |
DataSheet: | MSRT15060(A)D Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 25.26200 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io) (per Diode): | 150A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 150A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Three Tower |
Supplier Device Package: | Three Tower |
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The MSRT15060A(D) is a rectifier diode array which features two 150V p-n junction components, integrated together by the manufacturer to form a single device. It offers users a very convenient way to obtain protection from excessive current drain. This application field offers many advantages for its users due to its low inductance and space-saving solution. In addition, MSRT15060A(D) also has a built-in Schottky diode for ESD protection.
As a diode array, the MSRT15060A(D) offers a range of advantages to users. It offers a very high surge current ratings, making it a great device for protecting circuits from high current spike events. It is also capable of delivering very high voltages, making it ideal for applications where large amounts of energy need to be switched quickly. In addition, it offers very good thermal stability, meaning it is able to stay within its normal operating range even when subjected to high temperatures. Finally, its integrated Schottky diode provides excellent ESD protection for its users.
The working principle of MSRT15060A(D) is quite simple. When voltage is applied to its terminals, holes from the p-n junction pass into the n-type region, creating a potential barrier which prevents current from flowing. This barrier gradually gets larger as the voltage increases, further increasing the resistance of the device. When the voltage exceeds the breakdown threshold, the device switches on, allowing current to flow through it. The Schottky diode integrated into the device then acts as an additional blocking element, further increasing the overall resistance.
In summary, the MSRT15060A(D) is an ideal choice for applications which require protection from current surge events and high voltages. Its low inductance and integrated Schottky diode provide excellent ESD protection, while its high surge current ratings and good thermal stability make it a reliable device for users to count on.
The specific data is subject to PDF, and the above content is for reference
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MSRTA200140(A)D | GeneSiC Semi... | 42.11 $ | 1000 | DIODE GEN 1.4KV 200A 3 TO... |
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