MSRT200120(A) Allicdata Electronics
Allicdata Part #:

MSRT200120(A)GN-ND

Manufacturer Part#:

MSRT200120(A)

Price: $ 35.08
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE MODULE 1.2KV 200A 3TOWER
More Detail: Diode Array 1 Pair Common Cathode Standard 1200V 2...
DataSheet: MSRT200120(A) datasheetMSRT200120(A) Datasheet/PDF
Quantity: 1000
25 +: $ 31.57740
Stock 1000Can Ship Immediately
$ 35.08
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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Diodes - Rectifiers - Arrays

The MRST200120(A) is a type of array of diodes, which are components that allow electricity to flow through them in one direction only. A diode is made from two semiconductor layers, which are p-type and n-type silicon, and it functions as a rectifier. A rectifier is a device used to convert AC (Alternating Current) to DC (Direct Current), allowing the conversion to perform in either direction. The MRST200120(A) is designed specifically to control the flow of electricity in one direction. It can be used to control the flow of AC or DC current.

The MRST200120(A) array is used in a variety of applications including power supplies, rectifier circuits, and power conversion. It is a popular choice for automotive electronics and other high-voltage applications requiring unparalleled accuracy and reliability. It is also used extensively in industrial and aerospace equipment, as well as medical devices.

The main feature of the MRST200120(A) is its IGBT (Insulated Gate Bipolar Transistor) technology. This is a high performance device that combines the properties of transistors, diodes and thyristors. It provides superior performance in terms of high speed operation, reliability and overload protection. In addition, the device has low on-state voltage drop and low switching losses, making it suitable for high frequency applications.

The MRST200120(A) is constructed with a stack of four IGBTs. This arrangement is referred to as the common-emitter arrangement. Each IGBT is mounted on a ceramic substrate and connected to the silicon wafer. The electrical connections are made on the bottom of the package and are labeled according to their function. The control circuit of the device is mounted on the back portion of the package.

The working principle of the MRST200120(A) is simple. When a positive voltage is applied to the positive terminal of the array, the IGBTs in the package will switch on and the current will flow through the device. This allows for precise current control and flexibility when dealing with different types of electrical loads. When the positive voltage is removed, the IGBTs will switch off and the device will turn off. The IGBTs in the package will also have protection features that protect them from current overloads.

The MRST200120(A) is an ideal choice for a wide range of applications requiring precise current control and reliability. Its IGBT technology and common-emitter configuration give it superior performance in speed and overload protection. With its low on-state voltage drop, it is ideal for high frequency applications. It is widely used in automotive, industrial, aerospace and medical sectors and has become an invaluable component in many modern electronic designs.

The specific data is subject to PDF, and the above content is for reference

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