MSRT200140(A)D Allicdata Electronics
Allicdata Part #:

MSRT200140(A)D-ND

Manufacturer Part#:

MSRT200140(A)D

Price: $ 39.47
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE GEN 1.4KV 200A 3 TOWER
More Detail: Diode Array 1 Pair Series Connection Standard 1400...
DataSheet: MSRT200140(A)D datasheetMSRT200140(A)D Datasheet/PDF
Quantity: 1000
25 +: $ 35.52440
Stock 1000Can Ship Immediately
$ 39.47
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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The MSRT200140(A)D diode array is an advanced, 8-bit silicon PIN diode package designed for precision microwave applications.It features high power dissipation, excellent thermal and electrical performance, and is suitable for use in a range of applications, particularly in applications where very high switching and microwave frequencies are needed.The device has two independent and interconnecting polygons, and includes integrated over-current protection and MOSFETs for protection against short circuit conditions.

The MSRT200140(A)D is composed of a two-slice structure with an all-silicon passivation layer.It is composed of two independent and interconnecting PIN diode sections, with each half of the part being independently addressable.The device is available in both through-hole and surface-mount packages.Each of the eight PIN diode sections is controlled by a single address bit, and these address bits are used to drive the appropriate sections of the device.The device also contains several protection features such as a reverse bias protection circuit, thermal protection, and a guard-ring feature which reduces the potential for cross-talk.

The MSRT200140(A)D diode array is ideal for use in high speed digital applications as it offers a high switching frequency and low insertion loss.The device also offers excellent thermal and electrical performance, with a wide operating temperature range, low initial turn-on voltage, and low on-resistance.The device is suitable for use in high-speed microwave applications such as in satellite receivers, automotive radar, and base station communications.The device is also suitable for use in low frequency applications, such as in the telecommunications industry.

The MSRT200140(A)D diode array is an efficient and cost effective solution for applications where high power dissipation, high switching speeds and low losses are needed.The device is also suitable for design-in applications where very high frequencies are involved.The device provides an excellent combination of performance and signal integrity which is ideal for applications where high-speed digital signals are present.

The MSRT200140(A)D works by providing a voltage across the main diode section, which allows current to flow.The device consists of eight independently addressable PIN diode sections, each of which is controlled by a single address bit.The device is available in both through-hole and surface-mount packages, and is a popular choice for applications requiring high power dissipation and low insertion loss.The device features superior thermal and electrical performance, with a wide operating temperature range, low initial turn-on voltage, and low on-resistance.

The MSRT200140(A)D diode array is an ideal solution for applications which require high switching frequencies and low insertion losses.The device has excellent thermal and electrical performance, and is suitable for use in a range of high-speed applications.The device also offers numerous protection features including reverse bias protection, thermal protection, and a guard-ring feature for improved signal integrity.With its high power dissipation and low cost, it is an ideal choice for design-in applications where high frequencies are needed.

The specific data is subject to PDF, and the above content is for reference

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