MT40A1G8WE-075E:B

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MT40A1G8WE-075E:B Application Field and Working Principle

MT40A1G8WE-075E:B is a type of memory device. It is produced by Micron Technology which is a global leader in innovative memory and storage solutions. This device is used in embedded and server applications, such as high-end telecommunication and datacenter equipment.

The MT40A1G8WE-075E:B is a high-performance Double Data Rate 4 (DDR4) Synchronous Dynamic Random Access Memory (SDRAM). It is a memory module that supports a maximum operating frequency of 2400 MegaTransfers per second (MT/s). It has a maximum operating voltage of 1.2v and can be used for up to eight ranks.

The MT40A1G8WE-075E:B is built using high-performance 32nm 6T/7T process technology. It has a total of 8-gigabit (Gb) capacity, with integrated error correction code (ECC) support and on-die VREFDQ calibration. It also provides CRC error checking and cyclic redundancy (CR) protection.

The device consists of 8-bit wide 32,768 rows and 1,024 columns of DRAM cells. Each DRAM cell can store 256 bits of data. It is organized into banks, with each bank comprising 16 memory pages. Each page has 512 bytes of storage capacity.

The MT40A1G8WE-075E:B features a command control interface which is used to control the device operations. This interface is used to access the on-chip registers, which store various device configuration parameters. It also provides command queues which are used to access the device queues, such as the write queue for data storage.

The MT40A1G8WE-075E:B is also optimized for power saving. It provides self-refresh and register auto-pre-charge modes to reduce power consumption. It also utilizes advanced low-power state such as active power down (APD) or power-down (PD).

The device includes a DDR standard of 240 pin dual in-line memory module (DIMM). It supports a wide range of timings such as tFAW, tCKAC, and tWR. It is optimized for enthusiast and performance computing platforms which need high-speed and robust memory.

In addition to its high performance, the MT40A1G8WE-075E:B is also designed to ensure reliable data storage. It features a sophisticated Error Correction Code (ECC) algorithm which temporarily corrects single, correctable errors and can detect multiple errors due to memory cell degradation.

The MT40A1G8WE-075E:B is designed for servers, workstations, telecommunication and data storage applications. In summary, it is a high-performance and high-density memory module which provides easy access to data and reliable storage. It is an ideal solution for many types of embedded and server applications.

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