MT40A512M8RH-083E:B

MT40A512M8RH-083E:B is an innovative SDRAM module that offers increased performance and reliability, as well as enhanced power savings. This module is a high-speed device that is typically used in memory systems. It features DDR4-2133 memory technology, yielding up to 8GB of capacity on a single module. Its high-speed data transmission capabilities make it well suited for applications where rapid data access is needed.

The MT40A512M8RH-083E:B is a 1 rank-3bank dual-die DRAM module. DRAM, or Dynamic Random Access Memory, is composed of components that store data in cells made of capacitors. When the power is cut off, the contents of the cells are lost. DRAM performs better than SRAM, or Static Random Access Memory, which is faster but consumes more power and stores data in volatile memory. DRAM consumes less power but is slower and is often used to provide main memory in most computer systems.

The MT40A512M8RH-083E:B utilizes a controller that performs two basic tasks: reading data from and writing data to the memory cells. The controller includes a row decoder and column address register, which allow the processor to access the cells from memory. It also includes an error correction code (ECC) engine, which checks for data errors by examining the redundant bits stored in the cells. The controller uses these bits to reconstruct the data if an error is detected.

The MT40A512M8RH-083E:B module is a versatile device and can be used in a wide variety of applications. It is ideal for server or enterprise applications where its enhanced speed and capacity can be taken full advantage of. It can also be used in workstations, gaming systems, and other applications that require a large amount of memory.

The MT40A512M8RH-083E:B is designed to be extremely reliable and offers a number of features designed to protect the system against data loss or corruption. These features include on-die error correction and redundant array of independent chips (RAIC). RAIC allows the controller to read data from multiple chips simultaneously, reducing the risk of data errors. The on-die error correction technology helps to detect and correct any errors that occur in the data read from memory, helping to ensure the integrity of the data.

The MT40A512M8RH-083E:B is also designed to be energy efficient. It has power-saving features such as low-voltage input, reduced operating voltage, and sleep mode. All of these features help to reduce the power consumed while sitting idle, allowing the system to be more energy efficient.

The MT40A512M8RH-083E:B is a powerful device that offers an excellent combination of high-performance, reliability, and energy efficiency. It is suitable for a wide variety of memory applications, ranging from servers and workstations to gaming systems. Its advanced features and error correction technology help ensure that data is safe and secure.