MT40A512M16JY-083E AAT:B TR Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR4
Memory Size:	8Gb (512M x 16)
Clock Frequency:	1.2GHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.26 V
Operating Temperature:	-40°C ~ 105°C (TC)
Mounting Type:	Surface Mount
Package / Case:	96-TFBGA
Supplier Device Package:	96-FBGA (8x14)

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Introduction

MT40A512M16JY-083E AAT:B TR, as a kind of memory, is innovative in its application field and working principle. It has drawn great attention and is widely used, because of its friendly features such as high efficiency, low power consumption and low cost.

Application Field

MT40A512M16JY-083E AAT:B TR can be applied in many fields such as consumer electronics, medical, automotive and industrial. It has different capacities of memory and can meet different demands of high speed, reliable, power-efficient and secure on different applications.For consumer electronics, it can be applied in video game systems, mp3 players, digital cameras and HDTVs. For medical equipment, it can store patient medical database as well as provide medical software applications. MT40A512M16JY-083E AAT:B TR can offer excellent storage capacity for designing infotainment systems in the automobile sector. It can support a wide variety of functions such as audio and digital video broadcasting, real-time 3D navigation, entertainment features and driver information. In the industrial sector, MT40A512M16JY-083E AAT:B TR can be used for factory automation and process control, or used to control sensors such as electric devices and machines.

Working Principle

MT40A512M16JY-083E AAT:B TR is a Dynamic Random Access Memory (DRAM). DRAM is a kind of main memory used in computers which is known for its high data write/read speed. It stores data by means of a series of charged capacitors - electric charges that are maintained by a transistor within the chip. When the read/write operation is done on the memory, the capacitors need to be renewed every few milliseconds to maintain the charge.DRAMs are organized as cells of memory matrix as a grid of rows and columns. Whenever an operation is done on the memory, the row and column decoders activate the cell at the intersection of the location being accessed. A reference voltage is compared with the charge stored on the capacitor, and a “reset” operation occurs to restore the capacitor’s charge to the reference voltage when the desired value is equal.Through the above process, MT40A512M16JY-083E AAT:B TR can provide data input and output transaction with high speed and accuracy, as well as store data rapidly and reliably in various application fields mentioned earlier.

Conclusion

MT40A512M16JY-083E AAT:B TR, as a kind of memory, is widely used in various application fields and featured with high efficiency and resource utilization. Knowing its working principle can help us to better understand the internal operations in order to use it more efficiently.

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