MT40A512M8RH-062E:B TR

Memory products play an important role in the development of computer technology, which is used to store data and programs to improve the efficiency of computer operations. MT40A512M8RH-062E:B TR is a 512Mbit, 8 banks DDR3L SDRAM memory IC, featured with adaptive power management, high performance, and low power consumption. It is widely used in smart phones, tablets, digital cameras, servers and other digital products.

Application Field

MT40A512M8RH-062E:B TR is designed to include innovative and enhanced features to meet the ever-changing requirements of system designers and applications. Its wide operating range and high transfer rate provide efficient operation for a variety of applications across the industrial, automotive and consumer landscapes. As a high-performance memory device, MT40A512M8RH-062E:B TR offers features that include:

• Large scale storage capacity, up to 512Mbyte;
• High performance and low power consumption;
• Wide operating temperature range from 0℃ to +95℃;
• Adaptive power management that provides greater flexibility for various system design;}
• Support for industry standard software and tools;
• Industry leading DRAM technology for reliable operation.

MT40A512M8RH-062E:B TR is ideal for portable electronic products like digital cameras, MP3 players, smartphones, tablets, PDAs and other a variety of consumer electronic devices and embedded designs which require data storage, retrieval and transmission on a regular basis.

Working Principle

MT40A512M8RH-062E:B TR features 8 independent banks, each of which can process independent requests and support error-free functional run. It is a double data rate (DDR) synchronous dynamic random access memory (SDRAM) device that is typically used with a controller to provide signal timing and data throughput. The device communicates with other devices on the bus via standard bus protocols. When triggered by signals transmitted by the controller, data is received through the data bus, stored in the internal register, and read back to the controller. Since MT40A512M8RH-062E:B TR only needs one refresh cycle per 64 ms, it can effectively optimize power consumption without influencing functionality of the system.

MT40A512M8RH-062E:B TR is designed to reduce power consumption without affecting performance, increasing user experience and battery life. The device has a surge protection mode that can achieve low power consumption for the system during module idle or self-refresh states, thus significantly reducing its power consumption. The device also supports an adaptive power management feature, which allows adjusted output voltage, depending on the power supply environment. This feature provides greater flexibility for system design.

In summary, MT40A512M8RH-062E:B TR is an ideal memory device for consumer and industrial application requiring high-density storage, fast read/write speeds and reliable operation. This makes it a cost-effective solution for the rapidly growing market demand.