| Allicdata Part #: | MT40A2G4SA-062E:E-ND |
| Manufacturer Part#: |
MT40A2G4SA-062E:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 8G PARALLEL 1.6GHZ |
| More Detail: | SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.6GH... |
| DataSheet: | MT40A2G4SA-062E:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR4 |
| Memory Size: | 8Gb (2G x 4) |
| Clock Frequency: | 1.6GHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.14 V ~ 1.26 V |
| Operating Temperature: | 0°C ~ 95°C (TC) |
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Memory technology has come a long way, and this article will focus on one type of memory in particular. The memory discussed is the MT40A2G4SA-062E:E, and will cover its applications as well as its working principle.
The MT40A2G4SA-062E:E is a type of double data rate synchronous dynamic random access memory, often referred to as DDR SDRAM. This type of memory is most commonly used in computers to store information such as programs and data. The reason it is the most common type of memory for computers is because of its fast access time, high density, and good overall performance.
The MT40A2G4SA-062E:E is a low-power device, which helps reduce the total power consumption of the system. It also has a burst transfer rate of up to 8 Gigabits/second, which makes it one of the fastest types of memory available. The device has a density of up to 256 megabits and is available in various package types. The MT40A2G4SA-062E:E also has an extended temperature operating range, which enables its use in temperature-sensitive applications.
The MT40A2G4SA-062E:E has a number of applications, including uses in personal computers, gaming consoles, mobile phones, network servers, and embedded applications. Its extended temperature range also makes it ideal for automotive and military applications. It can be used in a variety of applications due to its low-power consumption, fast access time, and reliable performance.
The MT40A2G4SA-062E:E device utilizes a process known as synchronous dynamic random access memory. This type of DRAM uses a system of synchronizing clocks to control the operation of a memory array. This system allows the memory to read data in a set amount of time and achieve high-performance speeds. This type of memory typically operates at a speed of 400MHz or higher.
The working principle of the MT40A2G4SA-062E:E is based on the double data rate architecture. This type of architecture allows for two memory transfers to occur on a single clock cycle. This means that the device can double the data rate compared to conventional DRAM. Additionally, the data rate can also be increased even more by adding additional memory banks.
The MT40A2G4SA-062E:E offers an impressive combination of speed and memory capacity. It is an ideal type of memory for computing applications with low-power consumption and fast access times. Additionally, its extended temperature range makes it suitable for use in automotive and military environments. It is a great choice for a variety of applications due to its reliability and performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT40A512M16HA-083E IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A4G4FSE-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A4G8KVA-083H:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G PARALLEL 1.2G... |
| MT40A1G8SA-062E IT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A2G4PM-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A1G16WBU-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 96FB... |
| MT40A512M8RH-062E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A1G16WBU-083E:B | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A256M16GE-062E IT:B | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 1.6GH... |
| MT40A512M8RH-083E:B | Micron Techn... | -- | 3904 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A1G8WE-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A2G4SA-062E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M16LY-062E:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A1G8WE-083E AAT:B | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A256M16GE-075E:B | Micron Techn... | 29.55 $ | 8402 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A512M16JY-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A1G4HX-093E:A | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A256M16GE-083E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A512M16JY-062E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A512M16JY-083E AUT:B | Micron Techn... | 95.22 $ | 500 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A256M16GE-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A512M8RH-075E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A256M16GE-075E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
| MT40A2G4WE-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A512M16JY-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
| MT40A2G8FSE-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
| MT40A1G8WE-075E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A1G8WE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
| MT40A256M16GE-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
| MT40A1G8Z01AWC1 | Micron Techn... | 0.0 $ | 1000 | DDR4 8G DIE 1GX8Memory IC |
| MT40A512M16JY-062E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
| MT40A1G8SA-075:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
| MT40A512M8RH-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
| MT40A1G16WBU-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.33... |
| MT40A4G4NRE-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
| MT40A2G8FSE-093E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1067... |
| MT40A1G8WE-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
| MT40A1G4RH-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
| MT40A512M8RH-075E:B | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 1.33G... |
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MT40A2G4SA-062E:E Datasheet/PDF