MT40A2G4SA-075:E

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR4
Memory Size:	8Gb (2G x 4)
Clock Frequency:	1.33GHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.26 V
Operating Temperature:	0°C ~ 95°C (TC)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important part of most electronic systems. MT40A2G4SA-075:E is an example of a memory device whose application field and working principle will be discussed in this article. MT40A2G4SA-075:E is a type of dynamic random access memory (DRAM) and belongs to the family of double data rate (DDR4) SDRAM. It is primarily used for mobile device systems such as laptops, mobile phones and tablets. Thus, it is a particularly power efficient type of memory.The main features of the MT40A2G4SA-075:09 include its low-power operation, high bandwidth and high storage capacity. This makes it an ideal choice for applications that demand high performance and power efficiency. In terms of storage capacity, the MT40A2G4SA-075:E can store up to 8GB of data.The working principle of the MT40A2G4SA-075:E can be explained as follows. It consists of a complex network of cells, which are connected together in a matrix. Each cell contains a capacitor and a transistor. A logic signal applied to the cell can be used to change the state of the capacitor and thus change the value of the cell. This is known as writing to the cell. This logic signal can also be used to read from the cell, which retrieves the value stored in it. The MT40A2G4SA-075:E operates at high speeds, which are optimized for mobile devices. It can perform a read operation within 9 nanoseconds, which is extremely fast compared to other types of memories. It also supports several features such as on-die error correction and dynamic memory refresh.In summary, the MT40A2G4SA-075:E is a type of DRAM that is specifically designed for mobile device applications. It has a high storage capacity, low-power consumption and high data transfer rates. It also supports several important features such as on-die error correction and dynamic memory refresh. The working principle explained here can be applied to any type of memory.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description