MT40A512M8RH-075E AIT:B TR Allicdata Electronics

MT40A512M8RH-075E AIT:B TR Integrated Circuits (ICs)

Allicdata Part #:

557-1738-2-ND

Manufacturer Part#:

MT40A512M8RH-075E AIT:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 78FBGA
More Detail: SDRAM - DDR4 Memory IC 4Gb (512M x 8) Parallel 1.3...
DataSheet: MT40A512M8RH-075E AIT:B TR datasheetMT40A512M8RH-075E AIT:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)
Description

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The MT40A512M8RH-075E AIT:B TR is a type of memory used in high-end servers and appliances. It offers high storage capacity and performance, making it an ideal choice for those looking for reliable memory for their systems. In this article, we will discuss the application field and working principle of the MT40A512M8RH-075E AIT:B TR.

Application Field

The MT40A512M8RH-075E AIT:B TR is a type of Dynamic Random Access Memory (DRAM) that is often used in high-end servers and appliances. It is typically used for server applications because of its ability to store large amounts of data and its high performance capabilities. It is also an ideal choice for applications such as embedded systems, networking, and storage.

The MT40A512M8RH-075E AIT:B TR is designed to provide high memory density and improved performance over other types of DRAM. The high storage capacity and performance is a result of its highly advanced architecture, which is able to utilize multiple layers of DRAM. This type of memory is often used in large-scale server and appliance applications such as those used for cloud computing.

Working Principle

The MT40A512M8RH-075E AIT:B TR is a type of dynamic random access memory (DRAM), which is composed of an array of cells. Each cell consists of a capacitor and a transistor. The capacitor stores the electric charge while the transistor controls the flow of charge between the capacitor and other cells.

When data is written to a memory cell, it is written to the capacitors and stored as an electric charge. When data is accessed, the transistor switches are used to select the appropriate cell and read the data. Data can be written to and read from the memory cell in a matter of nanoseconds. This makes DRAM ideal for applications that require high performance or where data needs to be accessed quickly.

The MT40A512M8RH-075E AIT:B TR utilizes advanced architectures to maximize system performance. The memory architecture utilizes multiple layers of DRAM, allowing for larger memory capacity and high performance. The architecture also reduces the power consumption of the system, allowing for larger memory capacities without an increase in power consumption.

The MT40A512M8RH-075E AIT:B TR also utilizes advanced error correction and management techniques to ensure data integrity. Error correction is used to correct any errors that may occur during the transfer of data, while error management techniques are used to identify any potential problems before they occur. This helps to ensure that the data stored in the memory is not compromised.

Conclusion

The MT40A512M8RH-075E AIT:B TR memory is an ideal choice for high-end servers and appliance applications. It provides high storage capacities, high performance, and improved power efficiency. It also utilizes advanced architectures and error correction and management techniques, ensuring that data is secure and reliable. This makes it an ideal choice for applications requiring large amounts of data, high system performance, and reliable data management.

The specific data is subject to PDF, and the above content is for reference

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