MT41J256M8JE-187E:A

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Base Part Number:	MT41J256M8
Supplier Device Package:	82-FBGA (12.5x15.5)
Package / Case:	82-FBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 95°C (TC)
Voltage - Supply:	1.425 V ~ 1.575 V
Memory Interface:	Parallel
Access Time:	13.125ns
Series:	--
Clock Frequency:	533MHz
Memory Size:	2Gb (256M x 8)
Technology:	SDRAM - DDR3
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction

MT41J256M8JE-187E is a low-power, high-density memory device from Micron. It is a 32M-bit (4M x 8bit) DRAM that has been designed specifically for use in mobile applications where space, power and performance are at a premium. Its low-power usage is the result of innovative design, including dynamic power management, which allows the device to be operated at lower supply voltages without compromising performance.

Application

This DRAM device is suitable for use in a variety of handheld and mobile applications, such as cellular phones, PDAs, digital cameras, MP3 players and personal navigation devices. It is also suitable for use in embedded graphics applications, such as point of sale terminals and automotive display systems.The device supports a wide range of operating temperatures (industrial to extended), allowing it to be used in applications that require greater reliability and environmental protection.

Architecture and Features

The MT41J256M8JE-187E is based on a 4M x 8bit, 1- or 2- bank architecture and provides an optional input/output test logic. It has an internal refresh counter, an address counter and an auto-precharge function that allows continuous cycle accesses to different blocks of memory. The device also has a ZQ temperature compensation function that compensates for temperature variation during normal operation.The device features 400, 416 and 432 MHz speed grades with operating voltages from 1.8V to 2.7V. It supports multiple bus-orientation and burst lengths over 1 to 8 beats and can be operated with either single- or multiple-banks.The device is available in a 48-Pin FBGA (Fine-Pitch Ball Grid Array) package, with a maximum package height of only 0.75 mm. This allows the chip to be installed in limited-space application easily and gives the design extra flexibility.

Working Principle

At the heart of the MT41J256M8JE-187E is an 8-bit process optimized for low-power operation. This uses a cell-level refresh when the power is applied and also supports multiple refresh patterns during operation.The DRAM device supports a wide range of operating frequencies and voltages, allowing it to run at higher speeds while using less power. Additionally, the chip’s dynamic power management changes the supply voltage as needed in order to reduce leakage current and improve overall power efficiency.The device also features advanced error correction and read-disturb detection features that are designed to detect and correct any errors that may occur during data transmission. This increases the robustness of the device.

Conclusion

The MT41J256M8JE-187E from Micron is an optimized low-power, high-density memory device intended for use in handheld and mobile applications. It supports a wide range of operating temperatures, has an innovative power management system and features advanced error correction and read-disturb detection features. The device is available in a compact 48-Pin FBGA package which allows for easy installation in limited-space designs.

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