MT41K64M16TW-107:J TR

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Memory devices are an integral part of modern digital systems. Today, memory devices to store and access data at a very fast rate have become an essential part of any system.

The MT41K64M16TW-107:J TR is a JEDEC-approved Synchronous Dynamic Random Access Memory (SDRAM). It is a high-performance memory device which is capable of delivering a high data throughput rate. The device is suitable for use in many applications such as embedded systems, communication infrastructure equipment and consumer electronics.

The MT41K64M16TW-107:J TR has a 16M x 64bit organization with a data bus width of 16 bits. Its architecture is based on the traditional DRAM cell array and row-column decoding scheme with SDRAM controller. The device is designed to provide high bandwidth data access with low power consumption and a wide operating temperature range which makes it ideal for use in embedded and extended temperature mobile applications.

The operating temperature range of MT41K64M16TW-107:J TR is from -40°C to +95°C. The device has support for burst read, burst write, auto refresh, self-refresh and low-power-mode operations. It also offers various power management options such as auto-power-down and sleep mode. The device is powered with 1.8V and 3.3V VCC and an I/O power supply.

The MT41K64M16TW-107:J TR is organized as 8,192 rows x 512 columns x 16 bits per device and can run at up to 1066MHz on an 8n prefetch wide bus mode. It supports multiple access lengths such as 7, 8, 9 and 10 cycles and programmable burst lengths. The device also provides support for a data order of fixed and variable burst which can be programmed according to the user\'s requirements.

The MT41K64M16TW-107:J TR is designed for use in a variety of applications including embedded control, digital signal processing, industrial automation, network communications, server, storage and consumer electronics. It is used in applications where high data throughput, low power consumption and wide operating temperature ranges are important.

The working principle of the MT41K64M16TW-107:J TR is based on storing and transferring data directly between the RAM and the host system. It uses a row-column decoder and a dynamic refresh to keep data access optimized.The dynamic refresh is a self-correcting mechanism which enables the device to refresh the data contents within a short period of time thereby improving performance.

The MT41K64M16TW-107:J TR operates through a synchronous interface where the data transfers occurs in synchronization with the clock. It also offers a number of other features to enhance its performance such as on-chip data scrubbing and error correction. In addition, the device supports different power management solutions such as auto-power-down and sleep mode.

In conclusion, the MT41K64M16TW-107:J TR is an advanced SDRAM designed for use in a wide range of applications. It uses a row-column decoder to provide high data throughput rate and features power management solutions to reduce power consumption. It is suitable for use in embedded systems, consumer electronics, industrial automation and communication infrastructure equipment.

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