MT41K512M8DA-107 AIT:P Allicdata Electronics
Allicdata Part #:

557-1762-ND

Manufacturer Part#:

MT41K512M8DA-107 AIT:P

Price: $ 11.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 78FBGA
More Detail: SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 93...
DataSheet: MT41K512M8DA-107 AIT:P datasheetMT41K512M8DA-107 AIT:P Datasheet/PDF
Quantity: 235
1 +: $ 10.61550
Stock 235Can Ship Immediately
$ 11.68
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential element in computing that allows for the storage and retrieval of data. The MT41K512M8DA-107 AIT:P is a type of double data rate synchronous dynamic random access memory (DDR SDRAM) from Micron. It offers excellent performance in terms of speed, capacity and power efficiency.

The MT41K512M8DA-107 AIT:P is optimized for embedded applications where there is a need for high data throughput and density. Its advanced architecture allows for high-speed data retrieval and operates at a frequency of 1600 MT/s. It also offers a large memory capacity of 512Megabytes.

The MT41K512M8DA-107 AIT:P is based on the pseudo-static RAM (PSRAM) architecture, which is a high-speed, non-volatile memory device. This device utilizes a special organization of dynamic RAM cells to provide a much faster access time compared to traditional dynamic RAM. The architectural benefits of the PSRAM allow for faster memory access times, lower power consumption and increased data integrity.

The MT41K512M8DA-107 AIT:P also provides an automatic temperature compensation feature. This allows the memory device to operate over a wide temperature range, which is important for applications that require consistent performance in different environments. The memory device also offers error detection and correction features, ensuring a reliable operation.

The core of the MT41K512M8DA-107 AIT:P is a clock-driven synchronous dynamic random access memory (SDRAM). This type of SDRAM uses an external clock to control the timing of data read and write operations. The clock manages the access of data from or to the memory cell, and coordinate all memory operations. The SDRAM controller then translates the access request into the correct addresses and timing control signals. The DDR SDRAM uses a technique called double data rate to process two words of data in each clock cycle.

The MT41K512M8DA-107 AIT:P is designed to deliver outstanding performance, with a maximum burst length of 8 and a maximum number of transactions per second at 152M (aka Current in Octal). It is also optimized to deliver very low power consumption, helping to reduce overall system power consumption. The device is also capable of error detection and correction, to ensure it performs reliably. It is also fully configurable in terms of timing, allowing for flexible system designs.

The MT41K512M8DA-107 AIT:P is suitable for a variety of applications due to its high performance, low power consumption, error detection and correction, and configurable timing. It is ideal for use in embedded applications where high speed and capacity are required, such as in smartphones, smart TVs, tablets and other embedded products. It is also useful for industrial applications where reliability is a priority, such as industrial control systems, automation systems and medical devices.

The specific data is subject to PDF, and the above content is for reference

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