MT41K1G4DA-107:P

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MT41K1G4DA-107:P memory is a type of DRAM memory that is optimized for smart mobile devices, embedded systems, and various consumer applications. It is an ultralow power self-refresh DRAM that was developed with a robust power management feature set. The MT41K1G4DA-107:P has a wide temperature range of -40°C to +85°C with an extended temperature operating range of -25°C to +95°C.

MT41K1G4DA-107:P memory utilizes advanced process design technology to achieve the lowest power consumption level for a self-refreshing DRAM. The on-chip power management circuit monitors VDD power supply levels, effectively managing low voltage power supply levels. This low-power feature set allows for extended battery life in mobile devices and for operation in low-power, extended temperature applications. MT41K1G4DA-107:P memory is also offered in a wide variety of densities and configurations, making it ideal for embedded systems and consumer applications.

MT41K1G4DA-107:P memory is composed of a single 64Mb x 16Kb non-volatile memory (NVM) and a 512Kb refresh controller. The NVM consists of SDRAM cells, offering wide temperature and power operation ranges. This allows for the storage of data in robust and reliable rates. The integrated refresh controller ensures that the stored data is accurately stored in the NVM, providing maximum protection against data corruption. The integrated power management circuit of the NVM ensures that the NVM\'s power consumption is kept to a minimum.

MT41K1G4DA-107:P memory is designed for low-power applications and offers an array of power-saving features. The integrated Dynamic Self-Refresh (DSR) feature reduces NVM power consumption by up to 20%. DSR dynamically monitors the power levels on the memory bus and can power down the NVM when there is no activity on the bus. This eliminates the need for manual refresh cycles and increases the NVM efficiency. The Enhanced Deep Power Down (EDPD) mode enables a further reduction in NVM power consumption that results in as much as 10 times lower power consumption than that of a conventional DRAM.

The MT41K1G4DA-107:P memory has a wide application field in mobile devices and in various consumer applications. It is ideal for ultra-low power, mobile battery-operated devices such as mobile phones and PDAs, embedded systems, and various consumer applications. This low-power DRAM is also well-suited for extended temperature and rugged environments, offering optimal performance and reliability.

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