MT41J512M8THU-187E:A Allicdata Electronics
Allicdata Part #:

MT41J512M8THU-187E:A-ND

Manufacturer Part#:

MT41J512M8THU-187E:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 533MHZ
More Detail: SDRAM - DDR3 Memory IC 4Gb (512M x 8) Parallel 533...
DataSheet: MT41J512M8THU-187E:A datasheetMT41J512M8THU-187E:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: MT41J512M8
Supplier Device Package: --
Package / Case: 82-FBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.425 V ~ 1.575 V
Memory Interface: Parallel
Access Time: 13.125ns
Series: --
Clock Frequency: 533MHz
Memory Size: 4Gb (512M x 8)
Technology: SDRAM - DDR3
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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The MT41J512M8THU-187E is a type of synchronous dynamic random access memory (SDRAM), one of the main components used in memory systems. It has several advantages over other types of random access memories (RAMs) such as speed and greater storage capacity. As such, it has been widely adopted for use in a variety of applications, from personal computers and servers to embedded systems and network devices.In this article, we will take a closer look at the application field and working principle of the MT41J512M8THU-187E.The MT41J512M8THU-187E is a high-speed memory that offers storage capacity up to 512 megabytes (MB). It is commonly used in applications such as personal computers, workstations, servers, graphics processing units (GPUs), and embedded systems that require fast access to large amounts of data. It is also used in network devices for high-speed data processing and transfer.The MT41J512M8THU-187E is a synchronous dynamic random access memory (SDRAM) device, meaning that it synchronizes its internal operations with a clock signal provided by the system clock. The synchronous timing of the memory operations allows for faster data transfers. This increases speeds of memory access and therefore increases the efficacy and performance of the system.The MT41J512M8THU-187E is composed of 4 banks of 4 memory locations, each with a 4-bit word. The access time of the device is rated at 8ns, meaning that it can access a specific memory location in a time of 8 nanoseconds. The device is able to process up to 8 byte operations per clock cycle.To store data, the device uses a two-step process. The first step is the read cycle. During this cycle, the data from the memory address is read and then stored into a 10-bit assembly buffer called the row address register. The data is then transferred to the output before the next cycle begins.The second step in the process is the write cycle. During this cycle, the data from the assembly buffer is written back to the desired address. The entire process is repeated for each address to ensure that each location holds the correct data.In addition to its speed and storage capacity, the MT41J512M8THU-187E has a few other features worth noting. It is officially qualified for JEDEC/EIAJ and is compliant with the DDR2 SDRAM specification. It also features auto-refresh and self-refresh modes, which conserve energy and extend the life of the device.In conclusion, the MT41J512M8THU-187E is a high-performance, high-capacity memory device that is ideal for applications that require access to large amounts of data. Its synchronous timing allows for faster data transfers and its additional features extend the life of the device. As such, it is an ideal choice for a variety of applications, from personal computers and servers to embedded systems and network devices.

The specific data is subject to PDF, and the above content is for reference

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