MT41K512M8V00HWC1

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Memory is an essential part of any electronic system. MT41K512M8V00HWC1 is an memory device, which offers customers high reliability and faster response times in their applications. This memory device integrates into a variety of system designs and applications, and can be utilized across multiple product markets.

MT41K512M8V00HWC1 is a High-Speed Double Data Rate Synchronous Dynamic Random Access Memory (SDRAM). It uses a two-fold on-chip data buffer to achieve high data transfer rates, which makes it suitable for high-speed designs, such as networking, communication and embedded computing applications. MT41K512M8V00HWC1 integrates a 4M x 64 SDRAM array, with a speed grade of 8ns and an operating voltage of 1.8V. The datasheet also mentions that it offers an extra low power mode, so it’s very suitable for battery-operated appliances.

The memory device offers a wide range of features including burst size of 8 or 4, multiplexed address/data bus and written latency of 1, making it the optimal choice for low power embedded applications. These features have made MT41K512M8V00HWC1 the go-to solution for a wide range of embedded applications such as automotive, consumer, industrial, gaming and communication systems.

In terms of performance, MT41K512M8V00HWC1 is faster than standard SDRAM due to its unique dual data buffer. It uses a burst mode to read data in a single transaction, which results in fewer clock cycles per transaction. This also reduces the power consumption, which is especially beneficial for battery-powered devices. Additionally, it can support up to 100MHz clock speeds, making it suitable for high-speed network applications.

In terms of working principle, the memory device utilizes asynchronous CPU access, meaning that it can respond to requests from the CPU regardless of the device’s clock speed. When a request is received by the memory device, the device will fetch the requested data, copy it to a new data buffer and then send the data to the CPU. This ensures that the device is always ready to respond to requests from the CPU.

In addition to high performance and low power consumption, MT41K512M8V00HWC1 has active power management features such as self-refresh and auto-sleep to ensure efficient power usage. It also utilizes an on-chip error correction code (ECC) to ensure data integrity and reliability. This makes it suitable for applications such as automotive, communication and networking systems.

MT41K512M8V00HWC1 is a versatile memory device that is suitable for a wide range of applications. It is ideal for applications that require high performance and low power consumption. Thanks to its unique dual data buffer, it can read data in a single transaction and can also support up to 100MHz clock speeds. Its low power active power management features and on-chip ECC make it the perfect choice for embedded computing and other applications.

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