MT41J256M8HX-187E:D

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With growing technological advancement and the need for enhanced computing power, Memory devices have become an essential component in a variety of applications. Of these, the MT41J256M8HX-187E:D memory device is one of the most commonly used types of memory solutions. This article aims to explore the application field and working principle of the MT41J256M8HX-187E:D memory device.

What is the MT41J256M8HX-187E:D Memory Device?

The MT41J256M8HX-187E:D memory device is a type of double-data rate 3 (DDR3) synchronous dynamic random access memory (SDRAM). It is a type of semiconductor memory that stores information by using a synchronized clock signal to control the timing of the transfer of data. The MT41J256M8HX-187E:D is composed of an 8 Gbit (1 Gb = 1 Billion bits) die, with a data width of 16-bits and an operating voltage of 1.35V.

What are the Application Fields of the MT41J256M8HX-187E:D Memory Device?

The application field of the MT41J256M8HX-187E:D memory device mainly covers electronic engineering and PC building. For electronic engineering, MT41J256M8HX-187E:D memory devices can be used in devices like servers, desktop PC systems, laptops, tablets, and TVs. For PC building, the MT41J256M8HX-187E:D memory device is also suitable for use in devices like gaming platforms, photo editing systems, and business computing tasks.

What are the Working Principles of the MT41J256M8HX-187E:D Memory Device?

The operating principle of the MT41J256M8HX-187E:D memory device is based on the synchronous dynamic random access memory (SDRAM) technology. The device utilizes the synchronized clock signal to control the timing of information transfers from its memory cells. The memory cells within the device can be activated and accessed directly through the synchronization of the clock signal. This allows the device to transfer data in a much faster way compared to other DRAMs and non-volatile memories. The MT41J256M8HX-187E:D memory device can also be operated at low power levels by utilizing the self-refresh mode. This mode is characterized by the periodic decrease in the clock frequency, which helps to reduce its overall power consumption. In addition, the MT41J256M8HX-187E:D memory device also employs an Error Correction Code (ECC) algorithm. This algorithm helps to detect and correct any errors that may occur during data transfers on its memory cells.

Conclusion

In conclusion, the MT41J256M8HX-187E:D memory device is a versatile memory solution for a range of electronic engineering and PC building applications. It benefits from features such as low power consumption, high transfer speed, and error detection and correction capabilities. These features make the MT41J256M8HX-187E:D a reliable and trustworthy solution for a variety of applications.

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