
Allicdata Part #: | MT41J256M16HA-125:E-ND |
Manufacturer Part#: |
MT41J256M16HA-125:E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 80... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | MT41J256M16 |
Supplier Device Package: | 96-FBGA (9x14) |
Package / Case: | 96-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 95°C (TC) |
Voltage - Supply: | 1.425 V ~ 1.575 V |
Memory Interface: | Parallel |
Access Time: | 13.75ns |
Series: | -- |
Clock Frequency: | 800MHz |
Memory Size: | 4Gb (256M x 16) |
Technology: | SDRAM - DDR3 |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory: MT41J256M16HA-125:E Application Field and Working Principle
MT41J256M16HA-125:E is a synchronous dynamic RAM (SDRAM) technology consisting of a four-bank synchronous DRAM (SDRAM) chip that utilizes its own data bus system. It is designed to provide high-speed data access with maximum power efficiency, making it well-suited for memory applications requiring high-speed interface functions and high bandwidth.
Application Fields
MT41J256M16HA-125:E is suitable for a broad range of applications, including industrial and computer system applications, and even gaming products requiring high-bandwidth memory. Its many features, including a burst-length selection of 8, 4 and 2, and Burst-on-the-Fly (BOF) support, make it suitable for high-performance graphics memory. Other applications include cached memory buffers, network equipment, and low-power bus applications.
Working Principle
MT41J256M16HA-125:E utilizes a four-bank DRAM architecture to store and manage data. Its built-in arbiter can assign requests to each bank, ensuring that commands and data can be executed in parallel as well as efficiently. The chip’s cache page flush function allows it to clear both main and auxiliary memory quickly, reducing power consumption.
MT41J256M16HA-125:E supports burst-length of 8 and 4, as well as Burst-on-the-Fly which allows memory access by transferring multiple words within a single burst. The chip also features an auto-precharge function that can switch pages immediately after stimulation is completed, enabling quick data access as well as reduced power consumption.
The chip has an asynchronous read-out structure that provides quick data reading. It also has a control line that can activate a refresh cycle, allowing the module’s internal refresh cycle to occur automatically after a certain number of clock cycles. This reduces the load placed on the host CPU, allowing MT41J256M16HA-125:E to optimize the data management and access process.
Conclusion
MT41J256M16HA-125:E is a four-bank synchronous DRAM (SDRAM) optimized for high-speed data access and power efficiency. Its many features, including a burst-length selection of 8, 4 and 2, and multi word burst-on-the-fly support, make it excellent for a variety of memory application fields and gaming product requireing high-bandwidth memory. Plus, its asynchronous read-out structure enables quick data reading, while its auto-precharge function can switch pages quickly, reducing power consumption.
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